HIGFED1BOSA1

HIGHFED1BOSA1 Application Field and Working Principle

HIGHFED1BOSA1 are insulated gate bipolar transistors (IGBTs) based modules which allow high-speed switching and fast rise/fall times.

HIGHFED1BOSA1 are used in various applications such as household and industrial electronics, aerospace, automotive and transportation applications. They can also be used in power conversion and control systems.

IGBTs – Modules Overview

IGBTs are a type of power electronic device used for both AC and DC applications. They are complementary devices to transistors, and contain both a power field effect transistor (FET) and a bipolar transistor. This combination allows them to achieve high speeds and fast switching speeds. Their combination of bi-directional current containment, low noise and good thermal performance makes them ideal for controlling power and current.

IGBTs – Modules are usually packaged in plastic and metal packages, with multiple IGBTs connected in series and/or in parallel, depending on the application. The modules can be used in various applications, from small-scale hobbyist and DIY projects to large-scale commercial, industrial and automotive applications.

HIGHFED1BOSA1 Application Field

HIGHFED1BOSA1 IGBTs – Modules are widely used for many applications. They are used for power conversion and control systems, such as power supplies, inverters and thyristor controllers. They are also used in household and industrial electronics, such as lift systems, HVAC systems and power semiconductor switching services. Additionally, they can be used in motor and engine control units, aerospace and automotive applications.

HIGHFED1BOSA1 Working Principle

HIGHFED1BOSA1 IGBTs – Modules are based on the principle of bi-directional current flow. This allows them to be used to switch on and off current with high speed and low power consumption. As they contain a power FET and a bipolar transistor, they are able to switch at high speeds and low voltage losses.

The IGBTs in the HIGHFED1BOSA1 modules are connected in series and/or parallel in order to reduce the stray inductance and provide enhanced current sharing between the elements. The module also contains a snubber circuit to reduce the risk of turn-on/turn-off stress on the IGBTs, as well as a gate drive circuit to ensure the current source to the gate is consistent.

HIGHFED1BOSA1 IGBTs – Modules are able to provide high efficiency and high reliability, due to their low on-state voltage and low turn-off snubber voltage. Additionally, they have low noise and good thermal performance, allowing them to be used in many different applications.