HMC373LP3ETR RF/IF and RFID

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Frequency:	700MHz ~ 1GHz
P1dB:	21dBm
Gain:	14dB
Noise Figure:	1dB
RF Type:	CDMA, GSM
Voltage - Supply:	5V
Current - Supply:	90mA
Test Frequency:	1GHz
Package / Case:	16-VFQFN Exposed Pad
Supplier Device Package:	--
Base Part Number:	HMC373

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RF Amplifiers

The HMC373LP3ETR is an RF amplifier typically used in a range of applications such as communications systems, radio transmitters, and audio systems. It offers exceptional performance in terms of gain, power, linearity, and high input/output return loss.The HMC373LP3ETR utilizes an enhancement-mode pseudomorphic High Electron Mobility Transistor (pHEMT) process technology, making it ideal for commercial applications. The device is operating from a single voltage supply and provides up to +20 dBm of RF output power at frequencies up to 2.5 GHz. The HMC373LP3ETR is suitable for applications such as multicarrier WCDMA and CDMA systems, point-to-point radios, and public wireless networks.The HMC373LP3ETR is equipped with a fully differential gain, output, and power stages, allowing for a very wide bandwidth and low self-noise. Moreover, its broadband frequency coverage provides easy flexibility for the designer and system applications. Furthermore, the device has low distortion levels and excellent efficiency under all conditions.To begin, the HMC373LP3ETR’s working principle is quite simple. The device utilizes two amplifier stages, a differential input amplifier and an output amplifier. The input amplifier stage is controlled by two supplies, a main supply (Vdd) and an auxiliary supply (Vee), while the output amplifier stage is normally connected to the main supply. The input amplifier provides a wide input range (from -20 dBm to +20 dBm), maintaining a low-noise figure.The second stage, the output amplifier, is configured for low distortion and high efficiency. When turned on, the output amplifier stage amplifies the input signal and drives the RF output. The output level is determined by a control voltage set by the user.The HMC373LP3ETR is designed to provide a high linearity performance when operating in either continuous transmit or pulsed applications. The device is designed for a wide temperature range (-40°C to +85°C), making it a good choice for applications in harsh environment. In conclusion, the HMC373LP3ETR is an ideal solution for many RF amplifier applications. It is inexpensive, yet provides excellent gain linearity and high output power. Its flexibility and wide bandwidth make it a reliable and efficient choice for many applications.

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