HMC385LP4ETR

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The HMC385LP4ETR is a high-performance wideband amplifier designed for a variety of microwave and cellular applications. It offers a wide operating frequency range of 7.2 GHz to 8.5 GHz, as well as features such as low noise, high gain, high output power, and high linearity. The amplifier also offers an integrated bias regulator. This makes it ideal for Multi-User MIMO power amplifiers (MU-MIMOs), small cell radio heads, and other high-performance microwave applications.

The HMC385LP4ETR is a power amplifier, meaning it amplifies the power of a signal. It does this by using semiconductor devices such as transistors and diodes to convert a low-power signal into a higher-power signal. The amplifier is designed to operate in the microwave frequency range, so it is able to amplify signals in this range. It has a wide operating frequency range, from 7.2 GHz to 8.5 GHz. It also has a high input power range of 2.7 V to 8.0 V and an output power range of 2.8 W to 25 W.

The HMC385LP4ETR is based on gallium-nitride (GaN) technology, and as such, it has excellent efficiency and linearity. The amplifier has an integrated bias regulator, which ensures that the amplifier always operates within its optimal operating parameters, providing reliable performance. Additionally, the amplifier features an integrated bypass circuit, which enables the user to quickly bypass the amplifier for mode selection. Furthermore, the amplifier has an integrated temperature sensor, which provides temperature monitoring and temperature compensation.

The amplifier operates in two modes: Class A and Class AB. In Class A mode, the amplifier has a linear gain, with minimal distortion. In Class AB mode, the amplifier has a slightly higher gain, but with more distortion. The user can switch between these two modes by using the integrated bypass switch. Additionally, the amplifier has an enable input, which can be used to quickly turn the amplifier on and off.

The HMC385LP4ETR is a versatile wideband power amplifier, ideal for a variety of applications in the RF Amplifiers field. It offers an extremely wide operating frequency range, high gain, excellent linearity, and efficient bypass circuits. Additionally, its integrated bias regulator and temperature sensor make it ideal for use in demanding, high-performance applications in the cellular and microwave industries. Furthermore, its high output power makes it well suited for MU-MIMO power amplifiers, small cell radio heads, and other similar applications.

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