Allicdata Part #: | HMC385LP4TR-ND |
Manufacturer Part#: |
HMC385LP4TR |
Price: | $ 8.39 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC MMIC AMP VCO BUFFER 24QFN |
More Detail: | RF Amplifier IC 2.25GHz ~ 2.5GHz 24-QFN (4x4) |
DataSheet: | HMC385LP4TR Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 7.62776 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Frequency: | 2.25GHz ~ 2.5GHz |
P1dB: | -- |
Gain: | -- |
Noise Figure: | -- |
RF Type: | -- |
Voltage - Supply: | 3V |
Current - Supply: | 35mA |
Test Frequency: | 2.5GHz |
Package / Case: | 24-VFQFN Exposed Pad |
Supplier Device Package: | 24-QFN (4x4) |
Base Part Number: | HMC385 |
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RF amplifiers play an important role in Wifi applications, cellular communication, radar systems and communications systems. The HMC385LP4TR is a packaged monolithic microwave integrated circuit (MMIC) developed by the Analog Devices Corporation. It is a fully integrated broadband amplifier which provides a voltage gain of 24 dB and a noise figure of 5.5 dB. The HMC385LP4TR is suitable for a variety of applications such as wireless infrastructure, military, satellite radio, and industrial instrumentation.
The working principle of the HMC385LP4TR is based on the use of active devices such as transistors and diodes for amplification. Active devices are used in the form of an integrated circuit and the circuit is designed to provide linear operation. The integrated circuit contains several stages of amplification and each stage is designed to amplify a certain frequency range. The amplifier is also designed to provide power amplification with low noise performance.
The active devices used in the HMC385LP4TR are field effect transistors (FETs). These are transistors that have the ability to control the flow of electrons and they are used in the generation of microwaves. The FETs are configured in a linear configuration and this allows for the efficient control of the signals. The FETs are also designed to provide low noise performance.
In addition to the FETs, the HMC385LP4TR also contains several resistors and capacitors. These components are used to control the impedance of the device and also to provide frequency-dependent attenuation and transmission of signals. The resistors also provide an input and output impedance for the device. The device also contains multiple inductors which act as buffer elements and provide additional isolation from the environment.
The HMC385LP4TR also contains a number of integrated circuits such as a high voltage switching regulator. This is used to supply the necessary voltages to the FETs and other components in the device. The switching regulator also provides the necessary input and output currents for the amplifier. The amplifier also contains temperature compensation circuits which provide stable operation over different temperatures and allow the amplifier to work in different operating conditions.
The HMC385LP4TR is suitable for applications requiring high performance broadband amplification in the range of 1-6 GHz. It is a low noise amplifier and is suitable for applications where low distortion and high linearity is required. It is also suitable for applications involving multiple inputs and outputs with wide dynamic range and where the amplifier is subjected to large signal excursions. This makes it suitable for a wide range of applications such as point to point communication systems, cellular infrastructure, test equipment, wireless data links, broadcast and satellite communication.
The specific data is subject to PDF, and the above content is for reference
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