HMC386LP4E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HMC386LP4E is a Gallium Arsenide monolithic microwave integrated circuit (GaAs MMIC), specifically designed and intended for use in fiber-coupled communication systems and commercial radio frequency (RF) applications. This device provides an integrated gain block with stable quadrature signal generation for wireless communication systems such as cellular radio, automotive radar and communication transformers.

RF Amplifiers

With a wide range of functionality, the HMC386LP4E is well-suited for RF applications. It is designed to offer an optimum gain and noise figure performance for applications in frequency ranges up to a few GHz. The device is a four amplification stage low noise amplifier (LNA), which incorporates a drain feedback resistor to maintain the necessary phase shift and gain stability, as well as a bias circuit for optimum power transfer.

The gain of the HMC386LP4E is adjustable, allowing for flexibility when designing circuits for different applications. In addition, the device has a high output power capability, up to 17 dBm, or a signal-to-noise ratio (SNR) of up to 30 dB. This makes it an ideal choice for many applications which require high gain and high linearity.

The device is also equipped with a range of other features which enhance the device’s capabilities. These include a wide dynamic range, low distortion, and a fast settling time. Additionally, the device features a fast power up and down time and a low power consumption. All of these characteristics make the HMC386LP4E great for many RF applications.

Working Principle

The HMC386LP4E operates using a feedback loop system known as drain feedback. This system consists of a resistor connected between the drain and the gate of the transistor which acts as a feedback loop to ensure the stability of the device\'s gain and phase shift. The output of the device is regulated by the resistor, which allows for adjustable gain and a wide dynamic range. Additionally, the device is equipped with a bias circuit which helps to ensure maximum power transmission.

The device also utilizes a low noise figure to improve the signal-to-noise ratio. The low noise figure feature serves to reduce the amount of noise generation by the device, resulting in less interference with other signals. This is important in many applications which require clean signals with low levels of interference.

The HMC386LP4E is an ideal choice for RF applications due to its range of features and functions. With its low levels of noise generation, adjustable gain, wide dynamic range, and fast settling time, the device can be used to create reliable and efficient communication systems. Additionally, its low power consumption makes it an ideal choice for long-term use.

The specific data is subject to PDF, and the above content is for reference