| Allicdata Part #: | 1127-3106-ND |
| Manufacturer Part#: |
HMC390LP4E |
| Price: | $ 9.91 |
| Product Category: | RF/IF and RFID |
| Manufacturer: | Analog Devices Inc. |
| Short Description: | IC MMIC AMP VCO BUFFER 24-QFN |
| More Detail: | RF Amplifier IC VSAT 3.55GHz ~ 3.9GHz 24-QFN (4x4) |
| DataSheet: | HMC390LP4E Datasheet/PDF |
| Quantity: | 1000 |
| 64 +: | $ 9.00935 |
| Series: | -- |
| Packaging: | Cut Strip |
| Part Status: | Active |
| Frequency: | 3.55GHz ~ 3.9GHz |
| P1dB: | -- |
| Gain: | -- |
| Noise Figure: | -- |
| RF Type: | VSAT |
| Voltage - Supply: | 3V |
| Current - Supply: | 42mA |
| Test Frequency: | 3.55GHz |
| Package / Case: | 24-VFQFN Exposed Pad |
| Supplier Device Package: | 24-QFN (4x4) |
| Base Part Number: | HMC390 |
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The HMC390LP4E is a highly efficient 4 GHz linear power amplifier included in the family of RF amplifiers. This amplifier represents a new generation of GaAs amplifiers that employ a combination of state-of-the-art MESFET device, high-performance lamination technology and advanced design techniques to ensure that the highest levels of linear performance and power efficiency are achieved. The HMC390LP4E operates over a wide frequency range of DC to 4 GHz with maximum output power of 29.5 dBm and a gain of 27 dB. This amplifier features an excellent linearity over the frequency range with a low 1 dB compression point of 28 dBm and a very low noise figure of 4 dB. The amplifier also offers a high linearity and robust operation over temperature due to its broad bias range.
The HMC390LP4E amplifier is ideal for applications that require maximum efficiency, excellent linearity and wide bandwidth over a wide operating temperature range. These applications include commercial communications, land mobile, trunking, public safety, satellite communications, VSAT, Point-to-Point microwave radio, and instrumentation.Many communication systems require a linear power amplifier which delivers superior linear performance over a wide frequency range. The HMC390LP4E amplifier is an ideal choice for these systems due to its superior linearity, high efficiency and wide bandwidth over temperature.
The HMC390LP4E amplifier is designed using a hybrid Micro-Gap™ InGaP HBT process. This technology combines the best of both bipolar and FET technologies to create an amplifier with low noise, high linearity and wide dynamic range. The device consists of two stages of amplifiers, each stage utilizing one N-Type and one P-type FET, which is connected in a push-pull configuration. This configuration helps to achieve high linearity performance over the frequency range. The amplifier also utilizes an active bias network, which provides a stable bias to the amplifier and helps to reduce thermal runaway. The device also includes external resistors to provide gain control and temperature compensation.
The HMC390LP4E amplifier is an ideal solution for many applications requiring a wide range of amplification. With its high efficiency, excellent linearity, and low noise figure, the HMC390LP4E is ideal for a variety of communications applications. The amplifier can also be used in a variety of test and measurement applications due to its high linearity and wide frequency response.
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HMC390LP4E Datasheet/PDF