| Allicdata Part #: | HMC5042-ND |
| Manufacturer Part#: |
HMC5042 |
| Price: | $ 0.00 |
| Product Category: | RF/IF and RFID |
| Manufacturer: | Analog Devices Inc. |
| Short Description: | IC RF AMP |
| More Detail: | RF Amplifier IC |
| DataSheet: |  HMC5042 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | * |
| Part Status: | Obsolete |
| Base Part Number: | HMC504 |
Description
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HMC5042 is a GaN amplifier specifically designed for microwave and millimeter-wave applications. It offers high linearity and high gain in a small package size that minimizes board space requirements. Due to its low noise figure and high-efficiency, this amplifier is ideal for a wide range of applications such as instrumentation, point-to-multipoint links, and long-haul communications.The HMC5042 provides a number of features to support its design in typical RF amplifiers applications. The amplifier offers a wide gain control range, a large output power range, and a low input noise figure, which enables a wide variety of applications. Its input/output configurations support small signal applications such as linear phase noise characterization and two-tone testing, as well as power amplifications, frequency synthesizer stages, and multi-level modulation.The HMC5042 also offers excellent linearity and noise figure performance, making it well-suited for voice, video, and other communications services. The device’s wide small signal bandwidth of 3.8 GHz makes it suitable for analog and digital signals in multiple commercial and military applications.The HMC5042 is based on a high performance GaN technology and manufactured on a GaN-on-onsite (GOS) process. It features an integrated 50Ω input and output network which provides optimal performance over a wide range of temperatures and operating conditions. The input/output networks are designed with a Thermal Stability Design architecture to provide excellent gain and phase-matching stability over temperature.The amplifier employs two device stages to achieve maximum output-power and power-added-efficiency (PAE). The first stage provides linear amplification up to 10 dB of gain, while the second stage is responsible for a further 20 dB gain. This two-stage design ensures a high gain-flatness and linearity performance over a wide band, and it also allows for a high power output range, up to 30 dBm typical from a single device.The HMC5042 amplifier circuit also features integrated bias circuitry and temperature compensation circuitry to optimize the bias conditions for the best possible performance over a wide temperature range. The temperature compensation circuit is designed to minimize amplifier power fluctuation over temperature. In addition, the inclusion of over-voltage protection ensures maximum output power protection.In summary, the HMC5042 offers an excellent performance for a wide range of applications. Its advanced features make it well-suited for instrumentation, point-to-multipoint links, and long-haul communications. The device’s 50Ω input/output network ensures optimal performance over a wide range of temperatures and operating conditions, and its integrated temperature compensation circuitry provides maximum protection against power fluctuations. The amplifier’s wide small-signal bandwidth of 3.8 GHz makes it suitable for analog and digital signals in multiple commercial and military applications.
The specific data is subject to PDF, and the above content is for reference
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