HMC549MS8GETR Allicdata Electronics

HMC549MS8GETR RF/IF and RFID

Allicdata Part #:

1127-1831-6-ND

Manufacturer Part#:

HMC549MS8GETR

Price: $ 4.17
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: IC AMP MMIC LNA DUAL 8MSOP
More Detail: RF Amplifier IC General Purpose 40MHz ~ 960MHz 8-M...
DataSheet: HMC549MS8GETR datasheetHMC549MS8GETR Datasheet/PDF
Quantity: 498
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 3.78630
10 +: $ 3.40074
100 +: $ 2.78624
Stock 498Can Ship Immediately
$ 4.17
Specifications
Series: --
Packaging: Digi-Reel® 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Frequency: 40MHz ~ 960MHz
P1dB: 12.5dBm
Gain: 5dB
Noise Figure: 3.5dB
RF Type: General Purpose
Voltage - Supply: 3 V ~ 5.5 V
Current - Supply: 120mA
Test Frequency: --
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package: 8-MSOPG
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HMC549MS8GETR is a RF amplifier designed for applications in a wide variety of fields. This device functions as a radio frequency (RF) amplifier, which amplifies weak RF signal to produce the desired strength for transmission. The HMC549MS8GETR is designed to provide high gain, wide bandwidth, and low noise, making it the ideal signal amplification device for applications such as wireless communications, microwave communications, medical equipment, instrumentation, automotive, military and more.The HMC549MS8GETR employs gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) technology, allowing it to deliver high performance in a cost-effective package. It is designed to operate over the 8-10 GHz frequency range and features low noise figure (NF) of 1.1 dB and maximum gain up to 24.5 dB. The amplifier also features an adjustable gain, allowing it to be tailored to the specific application at hand.The HMC549MS8GETR works by amplifying weak incoming RF signals to the desired strength for transmission. The device utilizes a two-stage amplifier design, consisting of a zero-bias Schottky diode differential pair, followed by a common-gate amplifier. The differential pair is used to reduce common-mode noise, and the common-gate amplifier enhances the gain of the device. The device provides high gain and low noise, allowing for improved signal quality.The HMC549MS8GETR is an excellent choice for applications requiring high gain, wide bandwidth, and low noise. Its adjustable gain allows users to tailor the device to their specific needs, while delivering impressive performance. With its cost-effective GaAs monolithic microwave integrated circuit construction, the HMC549MS8GETR is an excellent amplifier option for a variety of applications in the RF website.

The specific data is subject to PDF, and the above content is for reference

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