HMC549MS8GETR RF/IF and RFID |
|
| Allicdata Part #: | 1127-1831-6-ND |
| Manufacturer Part#: |
HMC549MS8GETR |
| Price: | $ 4.17 |
| Product Category: | RF/IF and RFID |
| Manufacturer: | Analog Devices Inc. |
| Short Description: | IC AMP MMIC LNA DUAL 8MSOP |
| More Detail: | RF Amplifier IC General Purpose 40MHz ~ 960MHz 8-M... |
| DataSheet: |  HMC549MS8GETR Datasheet/PDF |
| Quantity: | 498 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| 1 +: | $ 3.78630 |
| 10 +: | $ 3.40074 |
| 100 +: | $ 2.78624 |
Specifications
| Supplier Device Package: | 8-MSOPG |
| Series: | -- |
| Packaging: | Digi-Reel® |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| Moisture Sensitivity Level (MSL): | -- |
| Frequency: | 40MHz ~ 960MHz |
| P1dB: | 12.5dBm |
| Gain: | 5dB |
| Noise Figure: | 3.5dB |
| RF Type: | General Purpose |
| Voltage - Supply: | 3 V ~ 5.5 V |
| Current - Supply: | 120mA |
| Test Frequency: | -- |
| Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
Description
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The HMC549MS8GETR is a RF amplifier designed for applications in a wide variety of fields. This device functions as a radio frequency (RF) amplifier, which amplifies weak RF signal to produce the desired strength for transmission. The HMC549MS8GETR is designed to provide high gain, wide bandwidth, and low noise, making it the ideal signal amplification device for applications such as wireless communications, microwave communications, medical equipment, instrumentation, automotive, military and more.The HMC549MS8GETR employs gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) technology, allowing it to deliver high performance in a cost-effective package. It is designed to operate over the 8-10 GHz frequency range and features low noise figure (NF) of 1.1 dB and maximum gain up to 24.5 dB. The amplifier also features an adjustable gain, allowing it to be tailored to the specific application at hand.The HMC549MS8GETR works by amplifying weak incoming RF signals to the desired strength for transmission. The device utilizes a two-stage amplifier design, consisting of a zero-bias Schottky diode differential pair, followed by a common-gate amplifier. The differential pair is used to reduce common-mode noise, and the common-gate amplifier enhances the gain of the device. The device provides high gain and low noise, allowing for improved signal quality.The HMC549MS8GETR is an excellent choice for applications requiring high gain, wide bandwidth, and low noise. Its adjustable gain allows users to tailor the device to their specific needs, while delivering impressive performance. With its cost-effective GaAs monolithic microwave integrated circuit construction, the HMC549MS8GETR is an excellent amplifier option for a variety of applications in the RF website.
The specific data is subject to PDF, and the above content is for reference
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