HMC636ST89 RF/IF and RFID |
|
Allicdata Part #: | 1127-3556-ND |
Manufacturer Part#: |
HMC636ST89 |
Price: | $ 6.74 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC GAIN BLOCK AMP SOT89 |
More Detail: | RF Amplifier IC General Purpose 200MHz ~ 4GHz SOT-... |
DataSheet: | HMC636ST89 Datasheet/PDF |
Quantity: | 105 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 6.12990 |
10 +: | $ 5.54022 |
100 +: | $ 4.58653 |
500 +: | $ 3.99389 |
Specifications
Series: | -- |
Packaging: | Cut Strip |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Frequency: | 200MHz ~ 4GHz |
P1dB: | 23dBm |
Gain: | 10dB |
Noise Figure: | 2dB |
RF Type: | General Purpose |
Voltage - Supply: | 5V |
Current - Supply: | 175mA |
Test Frequency: | -- |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89 |
Description
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RF Amplifiers - HMC636ST89 Application Field and Working Principle
The HMC636ST89 Radio Frequency (RF) amplifier is a broadband amplifier marketed by the semiconductor company, Analog Devices. This device is ideal for commercial, military, and aerospace applications requiring wideband amplification of small or weak signals.The primary application of the HMC636ST89 is to provide up to 80dB gain with low noise, high linearity, and exceptional stability. This device is capable of handling input signals from 0.2MHz to 900MHz, making it suitable for a wide range of functions, such as amplification of weak signals in satellite and ground-based radio communications, L-Band transmitter applications, and cellular infrastructure.The device features a +19dBm output power at 1dB compression point and a 16dB gain control range. The HMC636ST89 offers an excellent output IP3 of +55dBm and a low total harmonic distortion of -50dBc and is capable of operating in temperatures from -40 degrees Celsius to +85 degrees Celsius.The HMC636ST89 is constructed of a multi-stage amplifier architecture consisting of a low noise GaAs FET stage followed by five transistor stages, two of which are voltage-controlled. This configuration provides a high gain-to-noise ratio, allowing good performance with a small signal level.The operating frequency of the amplifier is set by an internal or external resistor. When the amplifier is powered up, the internal components self-adjust, providing an optimum bias current for the first stage to give an acceptable gain.The device is relatively tolerant of load variations and is able to withstand use in a wide variety of environments. It has a good output impedance matching performance and operates with a low input return loss of -20dB, and a decent intermodulation distortion (IMD) of 38dBc.In terms of power consumption, the HMC636ST89 still provides good performance. With the typical power consumption of 1.5 watts at 900MHz, the device offers approximately 2.5 watts of overall power gain. Overall, the HMC636ST89 is an excellent choice for a wide range of commercial, military, and aerospace applications requiring wideband amplification of small or weak signals. Thanks to its wide operating frequency range (0.2MHz to 900MHz), its low power consumption and its high levels of distortion and harmonic rejection, the HMC636ST89 can be used in a wide range of applications.The specific data is subject to PDF, and the above content is for reference
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