HMC637ALP5E

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1. DESCRIPTION

The HMC637ALP5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier which operates between 0.1 GHz and 6 GHz. The amplifier provides 13 dB of gain, 44 dBm output third-order intercept (IP3), and 29 dBm of output power at 1 dB gain compression while requiring 400 mA from a 12 V supply. Gain flatness is ±0.75 dB from 100 MHz to 6 GHz making the HMC637ALP5E ideal for electronic warfare (EW), electronic counter-measure (ECM), radar and test equipment applications. The HMC637ALP5E amplifier radio frequency (RF) I/Os are internally matched to 50 Ω, and the 5 mm × 5 mm lead frame chip scale package (LFCSP) is compatible with high volume surface-mount technology (SMT) assembly equipment.

2. FEATURES

    1. P1dB output power: 29 dBm

    2. Gain: 13 dB

    3. Output IP3: 44 dBm

    4. 50 Ω matched input/output

    5. 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2

3. APPLICATIONS

    1. Telecom infrastructure

    2. Microwave radio

    3. Very small aperture terminal (VSAT)

    4. Military and space

    5. Test instrumentation

    6. Fiber optics