| Allicdata Part #: | 1127-3010-ND |
| Manufacturer Part#: |
HMC657LP2E |
| Price: | $ 4.18 |
| Product Category: | RF/IF and RFID |
| Manufacturer: | Analog Devices Inc. |
| Short Description: | IC ATTENUATOR PASSIVE 6-DFN |
| More Detail: | RF Attenuator 15dB ±2dB 0Hz ~ 25GHz 50 Ohms 6-TDF... |
| DataSheet: | HMC657LP2E Datasheet/PDF |
| Quantity: | 174 |
| 1 +: | $ 4.18320 |
| 10 +: | $ 4.05770 |
| 100 +: | $ 3.97404 |
| 1000 +: | $ 3.89038 |
| 10000 +: | $ 3.76488 |
| Series: | -- |
| Packaging: | Strip |
| Part Status: | Active |
| Attenuation Value: | 15dB |
| Frequency Range: | 0Hz ~ 25GHz |
| Power (Watts): | -- |
| Impedance: | 50 Ohms |
| Package / Case: | 6-TDFN Exposed Pad |
| Base Part Number: | HMC657 |
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An attenuator is a device that is used to reduce the strength of a signal. The HMC657LP2E is a wideband, low power digital attenuator that is designed to provide precise, fast, and accurate attenuation. This device is ideal for applications such as power control, directional couplers, RF gain control, and TR switch control. It operates from a single 3.3V supply and requires no external components.
The HMC657LP2E has a unique wide-range, low-power digital attenuation control of up to 31dB. Its wide range and low power make it well suited for applications where precise attenuation control is required. It features a 12-bit control register, allowing for precise control of the attenuation range. The HMC657LP2E also has a TTL and CMOS compatible control port and a high isolation port of 45db when used in the on-state.
The HMC657LP2E utilizes an advanced SiGe BiCMOS process to provide high performance with low power consumption. It has a maximum insertion loss of only 1dB at 2.5GHz and is capable of withstanding high input power levels of up to +17dBm. It is also able to operate over a temperature range of -40°C to +85°C.
The HMC657LP2E provides excellent integration and superior performance for its low power consumption. It has an on/off state switch which allows the circuit to remain in a low power state while not in use. This allows the device to conserve power, as well as extend its operating life.
The working principle of the HMC657LP2E is based on a trench MOSFET process. The trench MOSFET process is a method of manufacturing transistors that increases their output power and noise levels, thereby providing superior performance and scalability. The device utilizes two channels of N-type MOSFETs which are connected in series. The first channel is used to control the total attenuation while the second channel is used to fine-tune the amount of attenuation required. When two positive voltages are applied to the gates of the device, the output amplitude of the signal is reduced.
The HMC657LP2E is a high performance, low power, and wideband digital attenuator with a wide range of applications. It can be used to control the power level of signals in RF communication systems, precision RF gain control circuits, directional couplers, and TR switch control. It can also be used to reduce the strength of a signal in biomedical and optical communication circuits. With its low power consumption, high integration, and low insertion loss, it is an ideal solution for applications with space and power constraints.
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HMC657LP2E Datasheet/PDF