HMC626LP5E

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The HMC626LP5E Amplifier Module is a wideband, GaAs MMIC Amplifier die designed for use in RF and microwave applications that require a wide gain bandwidth. The device offers a wide gain and output power range, with typical gain of 21 dB at 10 GHz, and high third-order output intercept point (OIP3) of 36 dBm. It can be used in 9 GHz to 20 GHz applications with up to 6 W of output power. The HMC626LP5E is ideal for use in multiple system architectures such as antenna signal chain, upconverter, downconverter, imaging, and communication systems.

The HMC626LP5E is a high power, wideband GaAs MMIC Amplifier that utilizes pHEMT technology for RF and microwave applications. It is a wideband amplifier that provides up to 6 W of output power with a gain of up to 21 dB. It also features excellent linearity and gain flatness, as well as good input and output match when operated over the temperature range of -40 to +85 °C. The device has an SMA female connector to enable easy input and output connection. This wideband, high performance amplifier is ideal for applications in the 9 GHz to 20 GHz frequency range.

The HMC626LP5E operates at frequencies between 9-20 GHz with a gain of up to 21 dB. It is designed to operate over the temperature range of -40 to +85 °C and features excellent linearity and gain flatness. The device has a 1.8V power supply and SMA female connector to enable easy input and output connection. The device provides up to 6 W of output power with high third-order output intercept point (OIP3) of 36 dBm, making it ideal for use in multiple system architectures such as antenna signal chain, upconverter, downconverter, imaging, and communication systems.

The working principle of the HMC626LP5E is based on GaAs pHEMT technology. The device is designed to provide high linearity, gain flatness and a wide output power range from 9 to 20 GHz. It is also designed to operate with low distortion and low noise. The device operates from a 1.8 V power supply and has an SMA female connector for easy input and output connection. In addition, the amplifier module is optimized to provide high third-order output intercept point (OIP3) of 36 dBm.

The HMC626LP5E amplifier module is ideal for use in a variety of RF applications including satellite communications, microwave radio, wireless infrastructure, and military & aerospace. It is particularly well suited for applications requiring high linearity, high power and wideband operation in the 9 GHz to 20 GHz frequency range. The high OIP3 of 36 dBm allows for increased signal to noise ratios, and the low noise figure ensures that sensitive measurements are not degraded by amplifier noise.

The HMC626LP5E is a wideband, high performance GaAs amplifier module designed for use in RF and microwave applications requiring a wide gain bandwidth. With high linearity, high output power, and wideband operation from 9 to 20 GHz, the device is ideal for use in multiple system architectures such as antenna signal chain, upconverter, downconverter, imaging, and communication systems. The device offers a high OIP3 of 36 dBm and a low noise figure. The 1.8 V supply and SMA female connector enable easy input and output connection.

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