HMC639ST89E

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RF Amplifiers

HMC639ST89E is a high performance GaN amplifier module that has been designed and manufactured for use in a range of RF applications. The device is designed with an integrated input matching circuit which makes it suitable for use in applications which require a wide gain range. Its key features include low noise figure, high linearity, wide gain bandwidth and low current consumption.

The HMC639ST89E amplifier module operates from a single +5 V supply, providing a typical output power of 1.6 W while drawing a maximum current of 1 A. The device also includes on-chip temperature compensation circuits which ensure reliable performance in demanding applications such as broadcast and instrumentation.

This amplifier module is designed with a host of integrated features which enable it to be used as a stand-alone device or as a part of a larger system. The integrated thermal control subsystem ensures operation is maintained within an acceptable temperature range and the integrated supply voltage monitor allows the device to be monitored for proper operation.

The HMC639ST89E amplifier module is designed to meet the demanding requirements of broadcast and instrumentation markets. Its integrated input matching circuit provides the optimal balance between gain and noise performance while the on-chip temperature compensation circuits ensure consistent performance over temperature. These features, combined with its robust power consumption and wide operating temperature range, make it ideal for use in a range of RF applications.

The working principle behind the HMC639ST89E amplifier module is based on a variable frequency linear power supply control (VF LPSC). It is designed to optimize the supply current and voltage to reduce power loss and ensure a consistent output power level over the lifetime of the device. The device also incorporates over temperature protection circuitry to prevent thermally induced faults.

To provide optimal performance, the HMC639ST89E amplifier module is tuned in the manufacturing process to meet the application-specific requirements. The tuning process involves optimizing the design parameters such as bias, gain, and temperature compensation to provide the desired performance. Additionally, the device includes on-chip diagnostics and built-in self test (BIST) circuits which allow for efficient monitoring of the amplifier’s performance during operation.

The HMC639ST89E is an ideal solution for a range of RF applications including instrumentation, distributed amplifiers and telecom basestations. Its integrated features make it suitable for a variety of applications while its high linearity and low noise performance make it ideal for broadcast and instrumentation applications. With its robust power consumption and wide operating temperature range, the HMC639ST89E is well suited for use in a range of RF applications.

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