HMC658LP2E

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Attenuators are special components used in radio frequency (RF), microwave, and optical systems to control signal strength. HMC658LP2E is a broadband GaAs distributed amplifier MMIC for use as an attenuator, amplifier, or for applications requiring accurate amplification. This application field and working principle is discussed in this article.

HMC658LP2E is a medium-power, broadband, three-stage MMIC distributed amplifier fabricated in an advanced gallium arsenide heterojunction bipolar transistor (HBT) process. The amplifier is stable over temperature, supply voltage, and process DC biasing requirements. It offers a high power performance under 4 dB of gain compression. The HMC658LP2E is designed to act as an amplifier, attenuator, or other amplification applications.

The gain of the HMC658LP2E is heavily dependent on the bias voltage applied. At a supply voltage of +8V, the electrical gain is about 8 dB and the input/output return loss is about -7dB. The maximum offered gain is 17 dB at +3V bias and the output power is more than 7 dBm at 1dB compression. The HMC658LP2E is also listed as a multi-stage amplifier that provides up to 17 dB of gain and moderate levels of linearity performance.

The bandwidth of the HMC658LP2E covers the frequency range from 1 GHz to 26 GHz, making it suitable for many different applications in the RF and microwave field. Its low noise figure and high gain make it suitable for use in amplifier, attenuator, receiver and other applications. The HMC658LP2E also features a low current consumption of 2.5mA, high linearity of +1, and a high output power of 12 dBm.

The primary application for the HMC658LP2E is as a broadband amplifier. It is designed to provide low-noise and high-gain amplification from 1 GHz to 26 GHz. The amplifier can be used to amplify or attenuate signals, as well as a wide range of other functions. The wide band performance and the excellent low-noise figure of the HMC658LP2E allows it to be used in receivers and transmitters, as well as in arrays, beamformer, and feed systems.

In addition, the HMC658LP2E can be used in a variety of other applications, such as IVAs, IF amplifiers, power amplifiers, wideband amplifiers, frequency converters, receivers, transmitters, and high-accuracy signal integrity measurement systems. The HMC658LP2E is also suitable for use in high dynamic range radar applications. It can be used as an attenuator in IMDR systems, as well as for MMIC chip development.

The HMC658LP2E offers excellent performance with a high power, low noise figure, high gain, and outstanding linearity performance. It is a reliable and powerful amplifier with wide frequency coverage, making it ideal for RF and microwave applications. Furthermore, it is an excellent choice for use in amplifier, attenuator, and other applications, due to its high power and reliable linear performance.

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