Allicdata Part #: | 1127-3302-ND |
Manufacturer Part#: |
HMC635 |
Price: | $ 77.83 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC MMIC POWER AMP DIE |
More Detail: | RF Amplifier IC VSAT 18GHz ~ 40GHz Die |
DataSheet: | HMC635 Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 70.75180 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Frequency: | 18GHz ~ 40GHz |
P1dB: | 23dBm |
Gain: | 19.5dB |
Noise Figure: | 8dB |
RF Type: | VSAT |
Voltage - Supply: | 5V |
Current - Supply: | 280mA |
Test Frequency: | 18GHz |
Package / Case: | Die |
Supplier Device Package: | Die |
Base Part Number: | HMC635 |
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HMC635 RF Amplifiers provide superior linearity and high gain in a small package for frequencies up to 2.3 GHz. It is designed to be used in a variety of applications such as amplifying cell phone signals, microwaves and satellite signals. This amplifier combines an internally matched low noise amplifiers, gain block and power amplifiers into a single package.
The HMC635 RF amplifiers are high performance, wide band, ultra-low noise transient response devices. It is designed for amplifying signals for both receive and transmit applications. The device offers two separate gain blocks and power amplifiers, as well as external control of the gain and impedance matching. It also features an optimal linearity of up to 20 dB and a maximum gain of 24 dB.
The HMC635 RF amplifiers are based on a GaAs HBT process technology and are designed to provide a high linearity in a small package. These amplifiers are capable of using up to 250mW of power, while providing low noise figure and LTE compliant high linearity. The device can be supplied with both positive and negative supply voltage and provides control of the gain via external control pins.
The working principle of the HMC635 RF amplifiers is based on a GaAs HBT process in which the active devices are biased at the center of their current capability and saturation voltage operating regions. The amplifier then operates in Class-F mode, in which the oscillations are suppressed by RF negative feedback. By tuning this negative feedback, the amplifiers are able to achieve both linearity and gain, while still operating at low power and low noise figure.
The HMC635 RF amplifiers are suitable for a variety of applications, including base station amplifiers, repeaters, point-to-point radios and satellite communications. The device provides high gain and linearity, which makes it ideal for amplifying cell phone signals, microwaves and satellite signals. The device is also designed to be energy efficient and has been consistently tested to meet international standards for performance.
In conclusion, the HMC635 RF amplifiers are a high-performance device, with excellent linearity and gain capabilities. It provides a wide bandwidth and low noise figure, making it suitable for a variety of receive and transmit applications. The HMC635 is designed to be energy efficient and also has passed multiple tests to meet international standards for performance.
The specific data is subject to PDF, and the above content is for reference
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