HMC636ST89TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Frequency:	200MHz ~ 4GHz
P1dB:	23dBm
Gain:	10dB
Noise Figure:	2dB
RF Type:	General Purpose
Voltage - Supply:	5V
Current - Supply:	175mA
Test Frequency:	--
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89
Base Part Number:	HMC636

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RF Amplifiers: HMC636ST89TR

The HMC636ST89TR is a high performance monolithic microwave integrated circuit (MMIC) amplifier designed specifically for LTE and 4 G applications. This compact RF amplifier has excellent power gain, gain flatness, return loss and noise figure. The HMC636ST89TR is a high performance, low noise and broadband amplifier.The HMC636ST89TR is a high frequency, broadband GaN amplifier designed for use in applications such as point-to-point radio systems, 4G/LTE base station and wireless infrastructure equipment. It provides gain of 32.5 dB (min) while achieving excellent power gain flatness across the entire 4G and LTE frequency range. The amplifier provides high linearity and low noise figure over the entire frequency range and is ideal for current and future communications systems.The HMC636ST89TR is designed to provide broadband amplification in the 4G and LTE frequency bands from 600 MHz to 3.8 GHz. It is a two stage amplifier with an input impedance of 50 ohms and a Class AB output. The amplifier has a power rating of 48 dBm (100 W) with a nominal voltage of +24VDC. The amplifier has a S-parameter and intermodulation distortion (IMD) performance to ensure excellent linearity with respect to power.The working principle of the HMC636ST89TR is based on the principle of cascading a set of transistor amplifier stages together to amplify the signal from a low power input to a higher power output. Each stage consists of a source follower transistor, a common-source amplifier transistor and an emitter follower transistor. The interstage coupling coefficients are determined by measuring the S parameters. The amplifier has an input impedance of 50 ohms and a Class AB output.The HMC636ST89TR amplifier’s excellent RF performance makes it ideal for use in wireless communications such as point-to-multipoint radio systems and 4G/LTE base stations. Its high gain and excellent gain flatness provide increased coherence and improves the signal quality in all wireless transmission applications. Its low noise figure also ensures excellent two-way communications systems. The high linearity of the amplifier also ensures that there are no signal distortion or aliasing. The HMC636ST89TR is an ideal choice for LTE and 4 G applications.

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