HMC813LC4BTR-R5

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The HMC813LC4BTR-R5 is a high-performance gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) amplifier. It is designed to be a driver amplifier in high-frequency applications, such as satellite transmission and mobile communications. This amplifier has an excellent high-frequency performance and provides low noise, high linearity, low power consumption, and high gain. The HMC813LC4BTR-R5 is suitable for applications from 5 to 8GHz, such as point-to-point and point-to-multipoint links.

The HMC813LC4BTR-R5 is a monolithic microwave integrated circuit (MMIC) amplifier that provides 12 dB of gain, greater than 80 dB of input-to-output isolation for the five-stage cascaded amplifier, and low distortion. It consists of five stages of cascaded amplifiers that use input-rejection, mid-band-gain, and output-stage matching networks. Additionally, the amplifier has an integrated input power limiter and pre-emphasis circuits that improve linearity. The pre-emphasis circuits ensure that the signal has the right frequency response for improved linearity in high-speed digital communication systems.

The primary use of the HMC813LC4BTR-R5 is as a driver amplifier in linear applications. It has excellent linearity, resulting in low distortion. The amplifier has a low noise figure and can provide gain of +35dBm at 8GHz. The device is suitable for use in linear applications such as television signal amplification, signal conditioning for cable television amplifiers, and optical signal processing. In these applications, the amplifier can provide transmit gain for digital, Analog and optical signal applications.

The HMC813LC4BTR-R5 operates over a wide frequency range from 5 to 8GHz, enabling it to be used in a variety of applications including satellite transmission, mobile communications, and wireless LANs. It is an ideal driver amplifier for high frequency applications due to its high-frequency performance, low noise, high linearity, and low power consumption. The amplifier can be used for linear applications where flat frequency response and low distortion are required.

The HMC813LC4BTR-R5 is intended to be used as a single stage amplifier with a wide range of operating frequencies up to 8GHz. The device has adequate input and output terminations, and is compatible with gain and bandwidth control techniques such as postlimiter linearization and pre-emphasis. The amplifier section is normally controlled with negative DC bias to keep the amplifier in a linear region. The amplifier also includes a built-in power limiter and pre-emphasis circuits for improved linearity.

The HMC813LC4BTR-R5 is a high performance gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) amplifier designed for use as a driver amplifier in linear applications. It is designed to provide flat frequency response and low distortion and is suitable for applications from 5 to 8GHz, such as point-to-point and point-to-multipoint links. The HMC813LC4BTR-R5 provides 12 dB of gain, greater than 80 dB of input-to-output isolation for the five-stage cascaded amplifier, integrated input power limiter, and pre-emphasis circuits for improved linearity. It is an ideal driver amplifier for high-frequency applications due to its low noise, high linearity, and low power consumption.

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