HMC8410LP2FE Allicdata Electronics
Allicdata Part #:

1127-3353-ND

Manufacturer Part#:

HMC8410LP2FE

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: WIDEBAND LNAS-DC-8GHZ P1DB20DBM-
More Detail: RF Amplifier IC Radar 10MHz ~ 10GHz 6-LFCSP (2x2)
DataSheet: HMC8410LP2FE datasheetHMC8410LP2FE Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Cut Strip
Part Status: Active
Frequency: 10MHz ~ 10GHz
P1dB: 21dBm
Gain: 19.5dB
Noise Figure: 1.1dB
RF Type: Radar
Voltage - Supply: 5V
Current - Supply: 65mA
Test Frequency: --
Package / Case: 6-VDFN Exposed Pad, CSP
Supplier Device Package: 6-LFCSP (2x2)
Base Part Number: HMC8410
Description

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RF amplifiers are one of the most important components of any communication system. They provide a gain in power to compensate for losses in the transmission medium and allow for greater transmission distances than would otherwise be possible. The HMC8410LP2FE is a high-performance amplifier specifically designed for use in radio frequency (RF) applications. Its features include a low noise level of 2.5 dB, high power gain of 20 dB, and low group delay of less than 0.1 microseconds. In this article, we will discuss the various application fields of this amplifier and its working principle.

Application fields

The HMC8410LP2FE amplifier is suitable for a wide variety of RF applications. It is widely employed in long-haul terrestrial microwave links, satellite communications systems, aircraft communications systems, and satellite signal distribution systems. It can also be used in combination with other amplifiers for radar and other high-power systems. In addition, it can be used to amplify radio signals in consumer electronics such as wireless keyboards, Bluetooth headsets, and Wi-Fi routers.

Working principle

The HMC8410LP2FE is a class-AB amplifier, which means that it uses two transistors for amplification. These two transistors work together to increase the power of the input signal. The transistors are driven by an input signal, which is amplified at the output. The output voltage is then regulated by an error amplifier circuit, which compares the output voltage with a reference voltage and adjusts the gain accordingly. The error amplifier circuit keeps the output stable even under changing input voltages.

The HMC8410LP2FE also has several features that make it well-suited for RF applications. It has a high input impedance, which minimizes signal losses due to mismatches between the input and output connections. It also has a low-noise floor, which means that it can amplify low-level signals without introducing any additional noise. In addition, its low group delay ensures that signals pass through the amplifier with minimal distortion.

Conclusion

The HMC8410LP2FE is a high-performance amplifier designed for use in RF applications. It provides a low noise level, high power gain, and low group delay, making it ideal for use in long-haul terrestrial microwave links, satellite communications systems, aircraft communications systems, and other types of RF applications. It has an error amplifier circuit that keeps the output stable even under changing input voltages. In addition, it has a high input impedance and low noise floor, which make it suitable for amplifying low-level signals.

The specific data is subject to PDF, and the above content is for reference

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