Allicdata Part #: | 1127-3286-ND |
Manufacturer Part#: |
HMC8200LP5ME |
Price: | $ 25.75 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC RF TRANSMITTER 32VFQFN |
More Detail: | RF Transmitter 800MHz ~ 4GHz 32-VFQFN Exposed ... |
DataSheet: | HMC8200LP5ME Datasheet/PDF |
Quantity: | 9 |
1 +: | $ 23.41080 |
10 +: | $ 21.84150 |
100 +: | $ 18.96430 |
Current - Transmitting: | 540mA |
Base Part Number: | HMC8200 |
Package / Case: | 32-VFQFN Exposed Pad, CSP |
Operating Temperature: | -40°C ~ 85°C |
Voltage - Supply: | 3.3V |
Features: | -- |
Memory Size: | -- |
Antenna Connector: | -- |
Data Interface: | SPI |
Series: | -- |
Power - Output: | -- |
Data Rate (Max): | -- |
Modulation or Protocol: | -- |
Applications: | General Purpose |
Frequency: | 800MHz ~ 4GHz |
Part Status: | Active |
Packaging: | Cut Strip |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HMC8200LP5ME is a high-power digital GaN amplifier designed for use with various RF applications. This GaN amplifier is a Class AB design that offers a wideband, high power output with wide operating temperature range. In this article, we will explore the capabilities of the HMC8200LP5ME and its application fields, as well as its working principle.
RF Transmitters
The HMC8200LP5ME is ideal for a wide range of RF applications, including RF transmitters. This GaN amplifier is capable of outputting up to 500W of power and a wideband frequency range of 0.01MHz to 16GHz. This wideband capability makes it suitable for a wide range of RF transmission applications. It is especially well-suited for applications that require a high degree of power and frequency stability, such as digital and cellular communications. It is also suitable for satellite communications, military applications, and other applications requiring high power and a wide frequency coverage.
Working Principle
The HMC8200LP5ME uses a high-power Class AB linear amplifier topology. This is a low-noise, high-efficiency type of circuit that is used for power amplifiers. The Class AB topology is chosen because it provides a wide frequency range and good signal-to-noise ratio. The amplifier is also capable of switching from class A operation to class B operation in order to accommodate changing demands.
A key feature of the HMC8200LP5ME’s is its wide operating temperature range. It can operate from -40°C to 125°C. This wide temperature range allows it to be used for applications where the environment is particularly harsh. In addition, the amplifier is capable of fast switching times and low distortion. These features make it suitable for applications that require fast switching or those that require high levels of linearity.
Conclusion
The HMC8200LP5ME is a high-power digital GaN amplifier designed for use with a range of RF applications. It offers a wideband, high power, and wide operating temperature range. This makes it suitable for applications such as RF transmitters, digital and cellular communications, satellite communications, and military applications. Furthermore, the HMC8200LP5ME uses a high-power Class AB linear amplifier topology, which provides a wide frequency range and good signal-to-noise ratio. It is also capable of fast switching times and low distortion, which makes it suitable for applications that require fast switching or those that require high levels of linearity.
The HMC8200LO5ME is an ideal amplifier for a range of RF applications, and its features make it a great choice for applications requiring high power, wide frequency coverage, and wide environmental range.
The specific data is subject to PDF, and the above content is for reference
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