HN2D02FUTW1T1 Allicdata Electronics
Allicdata Part #:

HN2D02FUTW1T1OSCT-ND

Manufacturer Part#:

HN2D02FUTW1T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY GP 80V 100MA SC88
More Detail: Diode Array 3 Independent Standard 80V 100mA (DC) ...
DataSheet: HN2D02FUTW1T1 datasheetHN2D02FUTW1T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Diode Configuration: 3 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 100nA @ 75V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Base Part Number: HN2D02
Description

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A two-phase diode bridge array, abbreviated as HN2D02FUTW1T1, is a type of diode rectifier array used in power supply circuits. This is a half-bridge diode array, as it contains two half-bridge circuits, presenting four power diodes and associated B terminals.

The HN2D02FUTW1T1 array of power diodes is used to generate a 140A continuous output current at a frequency of up to 500kHz with low output voltage ripple and low power dissipation. It can also be used in high-efficiency AC-DC power applications and in LLC resonant converter circuits.

The HN2D02FUTW1T1 is a high-performance diode bridge array, with a total external resistance of 0.2Ω. This resistance is measured between the A and B terminals and is important for device performance and heat dissipation.

The HN2D02FUTW1T1 also has a forward voltage drop (Vf) of 5V and a low reverse leakage current (IR) of less than 10μA. This makes the diode array suitable for power supply and charger applications, as well as other applications that require a low Vf and a low reverse leakage current.

The working principle of the HN2D02FUTW1T1 is based on the rectification of AC electricity and the voltage doubler effect. As the diodes are connected in a bridge configuration, an alternating current input produces a full-wave direct current (DC) output at the B terminals.

The rectification process also creates a DC voltage across the B terminals, which is twice the amplitude of the AC sinusoid input. As the current flowing from the A terminals is converted from AC to DC and the voltage across the terminals is doubled, the overall power is four times that of the AC input. The voltage doubler effect of the HN2D02FUTW1T1 makes it an excellent choice for applications requiring a high current and power conversion.

The HN2D02FUTW1T1 diode array can be used in a wide range of applications such as power conversion and AC-DC power supply circuits, resonant switching converters, solar panels, automotive charging systems, and LCD/LED displays.

The specific data is subject to PDF, and the above content is for reference

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