HN2S03FUTE85LF Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Configuration:	3 Independent
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	20V
Current - Average Rectified (Io) (per Diode):	50mA
Voltage - Forward (Vf) (Max) @ If:	550mV @ 50mA
Speed:	Small Signal =
Current - Reverse Leakage @ Vr:	500nA @ 20V
Operating Temperature - Junction:	125°C (Max)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	US6

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Introduction

HN2S03FUTE85LF is a low-current, fast recovery, medium power rectifier diode array, suitable for use in a variety of applications. It consists of two independent diodes on a single chip. The diode array consists of the anode, cathode and gate terminals and operates at normal temperatures in both AC and DC electrically conductive systems. By combining the advantages of its two independent diodes, it can provide excellent transient protection while also reducing power dissipation, capacitance and inductance.

Application Field

HN2S03FUTE85LF is one of the most widely used rectifier diode arrays. Its applications range from applications requiring fast switching, high power dissipation and transient protection to USB overvoltage protection, short-circuit protection, overvoltage protection, current-limiting protection and high-efficiency power conversion. HN2S03FUTE85LF is also often used in DC/DC converters, motorized components and automotive power systems.

Working Principle

HN2S03FUTE85LF operates on the principle of the PN junction. The PN junction is formed when opposite-charge type semiconductor material is joined together, with one region being positively charged (the P-type semiconductor material) and the other region being negatively charged (the N-type semiconductor material). When a voltage is applied across the two regions, it creates a potential barrier between them which blocks current conduction except in a specific direction which is determined by the polarity of the applied voltage.When a current is passed through the PN junction, it causes a voltage drop across the junction. When the polarity of the voltage across the junction is negative, it creates a potential barrier which blocks the conduction of current except in a single direction, and allows current to flow from the anode to the cathode. This creates a diode that allows current to flow in one direction only.In HN2S03FUTE85LF, the two diodes are arranged in a anti-series configuration, with one diode pointing one way, and the other pointing in the opposite direction. This creates an efficient route for returning the current when the voltage across the junction is outside of a prescribed range, allowing for fast recovery of current flow in cases of sudden changes in the external environment.

Conclusion

HN2S03FUTE85LF is an ideal choice for applications which require fast switching, high power dissipation and transient protection. Its low-current, fast recovery and medium power operation make it extremely versatile and suitable for a variety of applications, including DC/DC converters, motorized components and automotive power systems. Additionally, its anti-series configuration improves the performance of the diodes by allowing for fast recovery of current flow in cases of sudden changes in the external environment, making it an excellent choice for applications which require tight control of the current flow.

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