HN3A51F(TE85L,F) Discrete Semiconductor Products

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The HN3A51F(TE85L,F) is a Bipolar Junction Transistor (BJT) Array from Rohm Semiconductor. It consists of two NPN transistors in a dual-in-line package, and both have the same power dissipation and impact breakdown voltage ratings. Each transistor is rated at 600 mA and 40 V respectively. The HN3A51F(TE85L,F) is designed for applications that require low power consumption, such as sensing devices, low-power H-bridge circuits, and signal amplifiers.

In terms of its applications, the HN3A51F(TE85L,F) is suitable for use in devices requiring low power consumption such as mobile devices, automotive electronics, and industrial equipment. It is specifically designed to work in applications that require low voltage operation, such as in 3.3V systems and down to 1.8V systems, allowing for a wide range of usage scenarios. Their connected base-emitter junctions can be reverse-biased for safe operation and their relative high common-mode impedance makes them suitable for single-ended signal applications. The HN3A51F(TE85L,F) is also suitable for driving MOSFETs, allowing it to be used in low-dissipation switching operations.

The basic working principle of the HN3A51F(TE85L,F) involves applying a voltage to its base terminal, resulting in a current flowing through its emitter-collector junction. This current is then amplified by the transistor, and this amplified current is then added to the base current to create an amplified output. In other words, the conductivity of the BJT is controlled by the current applied to its base terminal, which results in a larger collector-emitter current.

The HN3A51F(TE85L,F) Bjt Array is a practical choice for applications that require low power consumption and fast switching speeds. Due to its increased common-mode impedance, it is particularly useful for low-dissipation switching operations and single-ended signal applications. Thanks to its low voltage operations, it can be used in a wide range of usage scenarios, including in automotive electronics, industrial equipment, and mobile devices.

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