HN4C51J(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | HN4C51J(TE85LF)TR-ND |
Manufacturer Part#: |
HN4C51J(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN 120V 0.1A SMV |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) Common... |
DataSheet: | HN4C51J(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) Common Base |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | SMV |
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The HN4C51J (TE85L, F) is a type of bipolar transistor array. This array consists of four NPN transistors in a single package. It is a good solution for applications that require a variety of voltage control, low power consumption and high frequency. As such, the HN4C51J (TE85L, F) is used in a variety of applications including mobile phones, medical equipment and automotive electronics.
The main purpose of the HN4C51J (TE85L,F) is to provide low on-state current drain and fast switching frequency. This makes it ideal for many applications as it can reduce power consumption but also provide high-speed operation. The array also offers a linear output transfer characteristic and low noise operation, ensuring a more reliable performance.
Another key advantage of the HN4C51J (TE85L,F) is its ability to handle high voltages. This can be important for applications such as mobile phones, medical equipment and automotive electronics, where high voltages may be present. The HN4C51J (TE85L,F) can also be used in power supplies and converters, as it is able to handle high currents.
The working principle of the HN4C51J (TE85L,F) is fairly simple. The array contains four NPN transistors, each with its own emitter connection. When the emitter voltage is increased, the current in the base increases, thereby controlling the current between the collector and emitter. This process is known as forward current conduction and is what allows the HN4C51J (TE85L,F) to control the current between the collector and emitter.
In addition to the linear output characteristics and high power ratings, the HN4C51J (TE85L,F) has a number of other benefits. It offers wide operating temperature range, which is important for applications where the environment can be extreme. The HN4C51J (TE85L,F) is also highly durable and reliable, providing a long life to the system on which it is used. Finally, the array is also able to provide good isolation between the individual transistors, protecting the system from over-current and thermal effects.
In summary, the HN4C51J (TE85L,F) is a type of bipolar transistor array, which is ideal for low power applications. It offers a linear output characteristic, high power rating and low power consumption, while being able to handle a wide range of voltages. In addition, it has a wide operating temperature range and good isolation between the individual transistors. As such, the array is used in many applications including mobile phones, medical equipment and automotive electronics.
The specific data is subject to PDF, and the above content is for reference
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