Allicdata Part #: | HS1DLMHG-ND |
Manufacturer Part#: |
HS1DL MHG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 1A SUB SMA |
More Detail: | Diode Standard 200V 1A Surface Mount Sub SMA |
DataSheet: | HS1DL MHG Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03493 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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HS1DL MHG Application Field and Working Principle
HS1DL MHG diodes belong to the category of single rectifier diodes, which are commonly used as ideal components in power supply, rectifier, motor control and other electronic equipment. As a high-efficiency switching element, the HS1DL MHG diode is widely used in AC, DC, pulsed power system and other power applications.
HS1DL MHG Application Field
HS1DL MHG diodes are widely used in AC, DC, and pulsed power system applications. In AC applications, they are often used as rectifiers, switch operation stabilizers, overvoltage protection, AC-to-DC converters, surge and waveform conversion devices, inductor filters, current coordinators, motor control, etc. In DC applications, they are used to provide voltage stabilization, voltage regulation and fault protection, as well as to provide DC power sources, converters, etc. In pulsed power systems, HS1DL MHG diodes are used as switches, oscillators, and power factor correctors.
HS1DL MHG Working Principle
HS1DL MHG diodes are made of a semiconductor material such as Silicon material, which is a type of n-type semiconductor with a relatively high doping level and a perfect reverse breakdown voltage (VBR) of a P-type junction. When a voltage is applied to the diode, electrons from the n-type region (emitter) will be attracted to the p-type region (collector), forming a depletion region, thus controlling the current flowing through the device. When the voltage is reversed, the diode blocks the current flow and thus allows the current to only flow in the intended direction.
The operation of HS1DL MHG diodes can be divided into two modes: forward conduction and reverse breakdown. In the forward conduction mode, the junction is automatically reverse biased, forming a depletion region and thus controlling the flow of current. The current flow is then determined by the voltage difference between the anode and the cathode. In the reverse breakdown mode, the voltage across the diode is increased until the reverse breakdown voltage (VBR) is reached, leading to a large surge in the current.
Conclusion
HS1DL MHG diodes are widely used in AC, DC, and pulsed power system applications. Common applications include rectifiers, switch operation stabilizers, voltage stabilizers, voltage regulators, fault protection, motor control, AC-to-DC converters, surge and waveform conversion devices, inductor filters, current coordinators, and power factor correctors. The working principle of these diodes involves the formation of a depletion region, which is formed when electrons from the n-type region are attracted to the p-type region. This results in a rectifying effect that can be used to control the flow of current, allowing it to only flow in one direction. As a result, HS1DL MHG diodes are a reliable and efficient switching element for many power applications.
The specific data is subject to PDF, and the above content is for reference
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