Allicdata Part #: | HS2AM4G-ND |
Manufacturer Part#: |
HS2A M4G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 2A DO214AA |
More Detail: | Diode Standard 50V 2A Surface Mount DO-214AA (SMB) |
DataSheet: | HS2A M4G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.06634 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 50pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are one of the most common components in electronic engineering, and they come in a wide variety of types and sizes. Among the various types of diodes, the most commonly used is known as the High-Speed Silicon Diode (HS2A M4G). This type of diode is well suited for a variety of applications and is used in many electronics systems. This article looks at the HS2A M4G diodes, their field of application, and their working principle.
A diode is a semiconductor device; it is composed of two layers of special semiconductor material, one is heavily doped with an n-type material, the other being lightly doped with a p-type material. Inside the semiconductor material are barriers that carry current. When an electric field is applied, the barrier breaks down, allowing electric current to flow. The HS2A M4G diode operates on this principle, and is designed to limit the current to a particular value.
The HS2A M4G are a type of rectifier diode, which means they are designed to allow current in only one direction. This is useful for a variety of applications, such as power converters, DC/DC converters, and inverters. They are also used extensively in rectifier bridges and other power electronic systems. Additionally, the HS2A M4G are ideal for high speed switching applications, as their low forward voltage drop and reverse recovery time makes them suitable for high frequency switching applications.
The working principle of the HS2A M4G is relatively simple. When the diode is connected in a forward bias configuration, the barrier between the n-type and the p-type regions breaks down and allows current to flow. The current flow is then regulated by the diode, with the current limiting at a value determined by the breakdown voltage. The current is also limited by the reverse recovery time, which determines how long the diode takes to recover after forward current has been applied.
The HS2A M4G are a popular choice in the electronics industry due to their high speed switching capabilities combined with their low forward voltage drop and reverse recovery time. They are well suited for applications such as power converters, DC/DC converters, and inverters, as well as rectifier bridges and high frequency switching applications. With their high performance and long-term reliability, the HS2A M4G are ideal for a variety of electronic engineering applications.
The specific data is subject to PDF, and the above content is for reference
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