Allicdata Part #: | HS2GAR3GTR-ND |
Manufacturer Part#: |
HS2GA R3G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 400V 1.5A DO214AC |
More Detail: | Diode Standard 400V 1.5A Surface Mount DO-214AC (S... |
DataSheet: | HS2GA R3G Datasheet/PDF |
Quantity: | 3600 |
1800 +: | $ 0.06469 |
3600 +: | $ 0.05822 |
5400 +: | $ 0.05499 |
12600 +: | $ 0.05014 |
45000 +: | $ 0.04690 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 50pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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.Introduction
The HS2GA R3G Diode is a high-speed, high-power Rectifier that is most suitable for use in applications where high-voltage and large current pulses are involved. It features extreme temperature and voltage tolerance, along with extremely low resistance and maximum power handling capability. The HS2GA R3G Diode is typically used as a protection diode to protect other parts from high-frequency and high-voltage damage, although its applications are vast. As such, the HS2GA R3G Diode is extremely useful in a wide range of applications, from telecommunications to medical equipment and beyond.Applications
The HS2GA R3G Diode is most commonly used as a protection diode in high-voltage and high frequency pulsed environments. It is used to protect power sources and sensitive electronic components from reverse voltages, over-voltages, drift voltages, and other dangerous voltage phenomena. The high-speed characteristics of the diode make it especially useful in situations where fast response times are required, such as in pulse-width modulation or other synchronous switching applications. Additionally, the high-power and rugged nature of the diode make it an ideal choice for applications where the high currents and extreme temperatures are of a concern. Examples of these types of applications include wind turbines, solar power inverters, and electric vehicle charging systems. The HS2GA R3G Diode can also be used in medical equipment applications, where high speed and low power consumption are necessary to minimize any potential harm to the patient.Working Principle
The HS2GA R3G Diode is a shunt-rectifier diode, which means that it acts to divert an incoming current away from the main circuit when the voltage across its terminals exceeds a predetermined threshold. The diode works by providing an alternative path for the current to flow through, thereby preventing any overloads or surges from damaging the system.The core components of the diode are its series-connected semiconductor layer and its extremely low resistance. The semiconductor layer is built from a material that can quickly switch between off and on states. When the diode\'s terminals receive an incoming voltage that is higher than its pre-set threshold, the semiconductor layer becomes conductive, allowing the current to flow through the diode.Once the voltage is reduced, the semiconductor layer reverts back to its non-conductive state, again providing a barrier between the current and the main circuit. Due to its ingenious design, the diode is able to handle both high voltages and high currents with superior performance.Conclusion
The HS2GA R3G Diode is a high-power, high-frequency rectifier that is perfect for use in applications where fast response times and high current/voltage delivery are of the utmost importance. It is typically used as protection for other parts from direct exposures to high voltages and currents.The working principle of the diode is founded in shunt-rectification, which involves using a semiconductor layer between the terminals and the main circuit to conduct current away from any surges that may occur. Its low resistance and high power handling capabilities make it an ideal choice for a wide range of applications.The specific data is subject to PDF, and the above content is for reference
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