HS2J R5G Allicdata Electronics
Allicdata Part #:

HS2JR5GTR-ND

Manufacturer Part#:

HS2J R5G

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 600V 2A DO214AA
More Detail: Diode Standard 600V 2A Surface Mount DO-214AA (SMB...
DataSheet: HS2J R5G datasheetHS2J R5G Datasheet/PDF
Quantity: 1700
850 +: $ 0.08017
1700 +: $ 0.07216
2550 +: $ 0.06614
5950 +: $ 0.06214
21250 +: $ 0.05812
42500 +: $ 0.05345
Stock 1700Can Ship Immediately
$ 0.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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HS2J R5G application field and working principle

HS2J R5G is a type of Diode - Rectifiers - Single. It is widely used in the fields of commercial, communication, consumer and medical electronics, automotive electronics and telecommunication. HS2J R5G is suitable for applications including high-speed switching, rectification and protection, bridges rectification, voltage regulator, etc.

Working Principle
HS2J R5G is a kind of p-n junction diode. The working principle of the diode can be easily understood by studying the structure of the p-n junction. The p-type material contains negative charges, and the n-type material contains positive charges, forming a p-n junction. When a certain forward bias voltage is applied to the p-n junction, a potential barrier is formed, allowing electrons to tunnel from the n-type to the p-type, thus forming a forward conduction path. The construction of the diode will determine the breakdown voltage which can be used for protection and regulation of the current.

The features of HS2J R5G can be summarized as follows:

  • High Surge Capability;
  • High Power Dissipation;
  • High current carrying capacity;
  • Low Forward voltage drop;
  • High temperature stability;
  • Long life and reliability.

HS2J R5G is widely used in high voltage and low voltage rectification stages. It is ideally suited for high-speed switching applications with low threshold voltage, low Reverse leakage current and low on-state voltage. In addition, HS2J R5G can be used for voltage controlled rectifying, free wheeling and clamping.

HS2J R5G is also suitable for applications with high pre-charge and turn-on requirements, such as in logic circuits and power supplies. With a low forward voltage drop, it can reduce efficiency losses in power supplies and reduce power consumption. The high surge current capability makes it ideal for driving inductive loads, while the high power dissipation makes it ideal for driving high-power components.

HS2J R5G is also used in high-speed protection circuits. Its fast switching speed allows for high speed protection for devices against over-voltage and over-current. Due to its high insulation resistance, it is also used in opto-isolators, audio devices and other sensitive applications.

To sum up, HS2J R5G is an ideal choice for applications that require high current switching, high power dissipation and high temperature stability. Its performance and wide application fields make it very popular in various industries.

The specific data is subject to PDF, and the above content is for reference

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