Allicdata Part #: | HS2MM4G-ND |
Manufacturer Part#: |
HS2M M4G |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 2A DO214AA |
More Detail: | Diode Standard 2A Surface Mount DO-214AA (SMB) |
DataSheet: | HS2M M4G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.07905 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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HS2M M4G Application Field and Working Principle
Diodes - Rectifiers - Single
The HS2M M4G application field is quite widespread. It can be seen in a variety of places like energy storage devices, thermostats and sensors, batteries, converters, etc.
The applications range from low-power industrial, commercial, automotive and consumer electronics to high-power communications, UPS systems, photovoltaic systems, and lighting. Additionally, HS2M M4Gdiodes can be used in medical and railway applications due to their high breakdown-voltage and surge-current capabilities.
The HS2M M4Gdiodes have a working principle of the micro-particle effect, which makes them well-suited for use in a variety of industrial and consumer applications due to their high surge-current and breakdown-voltage capabilities.
The micro-particle effect can be explained by the fact that the HS2M M4Gdiodes have very small particles of an extremely thin semiconductor material that can be formed into a conducting path when current passes through it. The particles are arranged in a unique design which enables them to receive considerable amounts of current and continue their function even though the applied voltage is much larger than the breakdown voltage of the diode.
Therefore, the HS2M M4Gdiodes provide an excellent high-frequency rectifying capability as well as a good reverse recovery time.In addition, the HS2M M4Gdiodes boast a wide operating temperature range, making them ideal for use in a variety of applications.
The HS2M M4Gdiodes have a wide range of electrical properties, such as forward voltage drop and maximum forward current, which allows them to be used in a variety of applications. Moreover, they are available in different sizes, package types and formats, so they can be used in any application that may require them.
Finally, HS2M M4Gdiodes have high performance in terms of robustness and reliability, which makes them well-suited for a variety of applications.
In conclusion, HS2M M4Gdiodes are the perfect choice for a variety of applications, due to their versatility, high performance and robustness. They are available in a wide range of sizes and formats, making them suitable for use in a variety of settings.
The specific data is subject to PDF, and the above content is for reference
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