Allicdata Part #: | HS3DBR5GTR-ND |
Manufacturer Part#: |
HS3DB R5G |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 3A DO214AA |
More Detail: | Diode Standard 200V 3A Surface Mount DO-214AA (SMB... |
DataSheet: | HS3DB R5G Datasheet/PDF |
Quantity: | 850 |
850 +: | $ 0.09301 |
1700 +: | $ 0.08370 |
2550 +: | $ 0.07673 |
5950 +: | $ 0.07208 |
21250 +: | $ 0.06743 |
42500 +: | $ 0.06200 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 80pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The HS3DB R5G is a type of a rectifier diode which is used for single-phase applications. It is characterized by low forward voltage drop, low power consumption and low forward voltage. It is an ideal solution for applications requiring high efficiency, low consumption and minimal physical size.
The HS3DB R5G is a compact, surface-mount diode that features two metal layers connected by an electroplated mesh layer. This mesh layer acts as the bridge between the two metal layers, thus resulting in a smaller package. The metal layers are electrically connected to each other, and the mesh layer is designed to be impervious to the voltage potential across the two metal layers. The physical size of this device is a fraction of a millimeter.
When used in single-phase applications, the HS3DB R5G is able to provide high current rectification. The device can be used to convert alternating current (AC) to direct current (DC). This allows it to be used in applications such as photovoltaic power conditioning and general power conversion.
The HS3DB R5G operates on the principle of rectification. The device is constructed such that it can only allow current to flow in one direction. This helps to ensure effective rectification of the incoming voltage. Furthermore, the device is designed to have a low forward voltage drop. This helps reduce the overall power consumption of the device and results in a more efficient operation.
In addition, the HS3DB R5G is able to reduce total device costs by eliminating the need for an external rectifier, as is required with some other types of rectifiers. The device is designed to be electrically isolated and requires no extra insulation. This helps reduce installation costs and simplifies the power conversion process.
The HS3DB R5G is a highly efficient device and is widely used in a variety of applications. It is particularly suitable for high-power rectification applications. This is because it is able to offer low forward voltage drop and high current rectification. Furthermore, the device is designed to be compact and efficient, making it an ideal choice for applications such as photovoltaic power conditioning and general power conversion.
In summary, the HS3DB R5G is a highly efficient and versatile rectifier diode that is suitable for a wide range of single-phase applications. It is characterized by low forward voltage drop, low power consumption and low forward voltage. The device can be used for converting AC to DC and is suitable for applications such as photovoltaic power conditioning and general power conversion. The device is also highly efficient and can help to reduce installation costs due to its electrical insulation.
The specific data is subject to PDF, and the above content is for reference
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