HS3KB R5G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	800V
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	1.7V @ 3A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	75ns
Current - Reverse Leakage @ Vr:	10µA @ 800V
Capacitance @ Vr, F:	50pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214AA, SMB
Supplier Device Package:	DO-214AA (SMB)
Operating Temperature - Junction:	-55°C ~ 150°C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

HS3KB R5G - Classification in Diodes - Rectifiers - SingleThe HS3KB R5G is classified as one of the diodes-rectifiers-single type. It is a kind of reverse-blocking thyristor-based semiconductor that offers protection against overloads and surges. This thyristor-based semiconductor is equipped with a built-in temperature-sensitive shutoff mechanism for enhanced safety and reliability. The HS3KB R5G consists of two isolated P-type silicon wafers and two isolated N-type silicon wafers. These four wafers are connected in alternating series to form the device. The P and N wafers can be interconnected for the forming of any desired number of thyristor cells. There is one gate connection at one end of the device that can be used to initiate and control conduction flow. The HS3KB R5G is capable of blocking high voltage in reverse polarity, while allowing high current in the forward direction. It can handle blocking voltages up to 1200 volts and forward current up to 100 amperes with carriers storage time less than 50 nano-seconds. The on-state voltage drop is more than 2 volts in forward mode and less than 0.6 volts in reverse mode. The main applications of HS3KB R5G are automotive and industrial, rail transportation, renewable energy systems and electro-mechanical drives. It is mainly used in switching voltage regulators, inrush current limiters, high speed power converters, DC-DC converters, control and power electronic circuit applications, industrial semi-conductor device protection circuits, etc. The working principle of the HS3KB R5G is based on the gate-controlled bistable operation of the thyristor. The blocking voltage is applied across its anode and cathode, and switch is opened with the gate control input. The rectangular waveform voltage across the anode and cathode terminals, along with the gate control input, produces the gate current and hence, the device is closed. The current will flow in the forward direction till the gate trigger is available. After the removal of the gate pulse, the device will be turned off and the current flow will discontinue. The HS3KB R5G is highly reliable and durable semiconductor device. It has optimal thermal performance and high electrical current carrying capability along with its blocking voltage range; making it highly suitable for a wide range of applications. Its low power losses and high frequency switching capability ensure reliable and energy efficient operation. Overall, the HS3KB R5G is a robust and reliable semiconductor device that offers reliable overload and surge protection and is suitable for a wide range of applications. Its reputed manufacturers take extra precautions while conducting their quality checks and product certifications to make sure that their products meet the industry standards. The HS3KB R5G is an ideal choice for any power supply system and industrial applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description