HS3MB M4G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	1.7V @ 3A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	75ns
Current - Reverse Leakage @ Vr:	10µA @ 1000V
Capacitance @ Vr, F:	50pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214AA, SMB
Supplier Device Package:	DO-214AA (SMB)
Operating Temperature - Junction:	-55°C ~ 150°C

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Diodes - Rectifiers - Single - HS3MB M4G Application Field and Working Principle

The HS3MB M4G diode is a type of single-chip rectifier diode that is used for high accuracy and high dielectric strength applications. It is characterized by low leakage current, high surge current, and high isolation voltage. This diode is mostly used in various fields such as switch mode power supplies (SMPS), automotive electronics, welding equipment, battery chargers, industrial electronic systems, and high-voltage protection circuits. In addition, the HS3MB M4G is suitable for applications with fast-charging rates and high-energy-discharge rates. The HS3MB M4G diode consists of two distinct layers: the positive layer, the negative layer, and a metal oxide barrier. The positive layer has a high resistance and is composed of heavily doped n-type material. The negative layer is composed of lightly doped p-type material, and the metal oxide barrier is composed of inorganic material. The metal oxide barrier has a high resistance and helps to provide electrical isolation between the two layers.When current is applied to the HS3MB M4G diode, it acts as a rectifier with an external voltage applied. This can be reversed by applying a negative voltage or simply flipping the direction of the current. When the external power is on and the external voltage is increasing, the negative layer becomes more conductive and the positive layer becomes more resistive. This causes the current to flow from the positive to the negative layer and form potential barriers between the two layers. As a result, the current is unable to pass through and is thus blocked. When the external voltage is decreasing, the negative layer becomes more resistive and the positive layer becomes more conductive. This causes the current to flow from the negative to the positive layer, and since potential barriers are formed between the two layers, the current is blocked again. In addition, the HS3MB M4G rectifier diode is designed to have high electrical insulation between the two layers. This helps to prevent electrical shorts and reduces power losses in high-voltage applications. In conclusion, the HS3MB M4G diode is a reliable and efficient device for various applications and is characterized by low power consumption and high reliability.

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