Allicdata Part #: | HSM3100GE3/TR13-ND |
Manufacturer Part#: |
HSM3100GE3/TR13 |
Price: | $ 0.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE SCHOTTKY 100V 3A DO215AB |
More Detail: | Diode Schottky 100V 3A Surface Mount DO-215AB |
DataSheet: | HSM3100GE3/TR13 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.48223 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 810mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-215AB, SMC Gull Wing |
Supplier Device Package: | DO-215AB |
Operating Temperature - Junction: | -55°C ~ 175°C |
Base Part Number: | HSM3100 |
Description
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HSM3100GE3/TR13 Application Field and Working Principle
The HSM3100GE3/TR13 is a single diode rectifier. This includes the most common type of diode, the P-N junction diode. A rectifier is an electrical component that converts alternating current (AC) to direct current (DC). This type of diode is designed to allow current to pass through it in only one direction. The HSM3100GE3/TR13 is a surface-mount, Schottky rectifier diode.The HSM3100GE3/TR13 is primarily used in applications requiring high power density and low reverse leakage. The diode can handle power levels up to 100 watts, making it suitable for a wide range of applications. Examples of potential uses include automotive lighting, UPS systems, and surveillance camera systems.The main advantage of the HSM3100GE3/TR13 is its low voltage drop. The voltage drop is typically 0.2 volts or less, which makes the device very efficient in converting AC to DC. This saves energy and reduces the amount of heat generated during operation.The working principle of the HSM3100GE3/TR13 is based on the properties of a P-N junction diode. A P-N junction occurs when two types of semiconductor material, one positively charged (P) and one negatively charged (N), are bonded together. This generates a barrier that allows current to flow in only one direction. When a voltage is applied across the diode, it acts like a one-way valve and allows current to flow.The Schottky diode is also called a hot-carrier diode due to its ability to handle higher voltages and power levels than standard P-N junction diodes. This is accomplished by allowing electrons to bypass the P-N junction barrier. As a result, the Schottky diode will only allow current to flow in one direction, just like a standard P-N junction diode.Overall, the HSM3100GE3/TR13 is an excellent device for any application that requires high power density and low reverse leakage. Its low voltage drop makes it highly efficient and its Schottky design makes it suitable for high voltage and power levels.The specific data is subject to PDF, and the above content is for reference
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