Allicdata Part #: | HTZ280H24K-ND |
Manufacturer Part#: |
HTZ280H24K |
Price: | $ 352.94 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | DIODE MODULE 24KV 4.7A |
More Detail: | Diode Array 1 Pair Series Connection Standard 2400... |
DataSheet: | HTZ280H24K Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 317.64600 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Series Connection |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 24000V |
Current - Average Rectified (Io) (per Diode): | 4.7A |
Voltage - Forward (Vf) (Max) @ If: | 23V @ 12A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 500µA @ 24000V |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Base Part Number: | HTZ280 |
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Diodes - rectifiers - arrays are commonly used for various applications such as power conversion, voltage regulation, and protection from overvoltage and overcurrent in electronics. The HTZ280H24K is such a diode array that is used for a variety of applications, including switching power supplies, motor control and integrated circuits.
The HTZ280H24K is a surface-mounted, ultra-high power voltage switching diode array. It utilizes a high-performance 6T process to achieve a low-voltage drop while still maintaining a high power rating. The HTZ280H24K has a maximum forward voltage drop of 0.1V, a current rating of 5A, and a maximum power dissipation of 25W.
The HTZ280H24K diode array has a number of features that make it ideal for use in many applications. The devices are designed to withstand transients of up to 100V, making them suitable for use in high voltage and power applications. The devices have a very low frequency noise level and have a maximum reverse leakage current of 0.2mA, ensuring that they can be used in many noise sensitive applications. Additionally, the HTZ280H24K has an operating temperature range of -55°C to 175°C, making it suitable for use in a wide range of environmental conditions.
The principle of operation of the HTZ280H24K diode array is based on its inherent physical characteristics, including the semiconductor material used in its construction and the manufacturing process used to create the components. The materials used are designed to create an electrical barrier that prevents electric current from flowing through the device except in one direction. This is accomplished by creating a depletion zone at the PN junction of the device. This depletion zone forces the majority carriers, electrons and holes, in the semiconductor material to move in opposite directions, thus creating a voltage drop of 0.1V across the diode. Additionally, as the current increases, the power rating of the device also increases. This allows for a higher power rating for the device when used in switching power supplies, motor control or integrated circuits.
In conclusion, the HTZ280H24K diode array from is an ultra-high power, low temperature drop device designed for high voltage and power applications. With a 0.1V forward voltage drop and a current rating of 5A, the HTZ280H24K can provide reliable power conversion and protection from overvoltage and overcurrent in a wide range of applications. Additionally, the device has a maximum reverse leakage current of 0.2mA, making it suitable for use in noise sensitive applications. The HTZ280H24K is an ideal solution for a variety of applications where reliable power protection and conversion is required.
The specific data is subject to PDF, and the above content is for reference
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