Allicdata Part #: | HV275C-ND |
Manufacturer Part#: |
HV275C |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Littelfuse Inc. |
Short Description: | GDT 2750V 3KA |
More Detail: | Gas Discharge Tube 2750V 3000A (3kA) 2 Pole User ... |
DataSheet: | HV275C Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | HV |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Voltage - DC Spark Over (Nom): | 2750V |
Impulse Discharge Current (8/20µs): | 3000A (3kA) |
Tolerance: | -- |
Number of Poles: | 2 |
Fail Short: | No |
Mounting Type: | User Defined |
Package / Case: | Cylinder No Lead |
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Gas Discharge Tube arresters (GDT) are devices used to protect circuit components from high voltage surges due to lightning, switching events or other transient phenomena. They rely on the physical breakdown of a gas-filled tube in order to short circuit the surge event and prevent damage to the underlying circuitry. A common example of GDT used in the protection of integrated circuits is the HV275C.
This is a specialized device designed for the protection of power MOS devices and other circuit components from over-voltage events and voltage spikes. It consists of an outer aluminum housing filled with a proprietary gas mixture and an interior chamber containing an anode, cathode, and a variety of materials designed to catalyze a controlled gas discharge. When subjected to a power surge of sufficient magnitude, the anode and cathode will experience a brief discharge, breaking down the gas and creating a low impedance ionization channel that diverts the surge around the protected circuit.
The HV275C also features several other components to enhance its protection capabilities. A metallized glass condenser acts to shunt unwanted high frequency signals and transients, while an electrostatic trap element serves to suppress impulses with frequencies too high for the GDT to handle. A series of resistors and diodes are included to reduce reverse breakdowns due to asymmetric impulses, while a snubber capacitor helps to provide protection against inductive switching transients.
In addition to the GDT-based protection, the HV275C also provides an integrated ESD protection circuit. This circuit consists of two Silicon-Carbide (SiC) diodes connected in inverse series. The diodes act to suppress any transient input voltage or current below a certain threshold and will thus keep the circuit safe from Electro-Static Discharge (ESD) damage.
This allows the HV275C to provide a comprehensive level of protection from a wide array of common over-voltage and ESD threats. In addition to use in the protection of power MOS devices, the gas discharge tube technology employed by the HV275C also makes it suitable for protection of other types of circuits such as servo motors, power supplies, and other consumer electronics. The combination of robust protection capabilities and a wide variety of applications make the HV275C a popular choice for integrated circuit designers.
The specific data is subject to PDF, and the above content is for reference
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