Allicdata Part #: | IDB10S60C-ND |
Manufacturer Part#: |
IDB10S60C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE SILICON 600V 10A D2PAK |
More Detail: | Diode Silicon Carbide Schottky 600V 10A (DC) Surfa... |
DataSheet: | IDB10S60C Datasheet/PDF |
Quantity: | 1000 |
Series: | CoolSiC™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 10A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 10A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 140µA @ 600V |
Capacitance @ Vr, F: | 480pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Operating Temperature - Junction: | -55°C ~ 175°C |
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When it comes to electronic components, one of the most popular and widely used electronic components is the single rectifier diode. A single rectifier diode is a semiconductor diode that is used to allow only unidirectional current flow. This is primarily done by acting as a one-way gate between two nodes of an electrical circuit, allowing current to flow in only one direction, while blocking current in the opposite direction. The single rectifier diode is part of the larger family of diodes, which also includes the Zener diode, the Schottky diode, and the tunnel diode.
The IDB10S60C is a single rectifier diode from Infineon Technologies. The diode has a rating of 10A at 600V making it suitable for use in high power applications such as motor control, UPS, power supplies and welding machines. The diode is also suitable for high-frequency switching in applications such as inverters and solar converters. Its features include fast recovery from its off-state, low forward voltage drop, high surge current capability, as well as a low leakage current.
The IDB10S60C is designed to have an average forward current of 10A while the maximum rating is 20A. The breakdown voltage of this diode is 650V with a maximum clamping voltage of 900V. The forward voltage drop is 1.2V at the rated current of 10A and the reverse current at the breakdown voltage is 1.5mA. In addition to this, the diode has an operating temperature range of -40 to 125°C and a storage temperature range of -40 to 150°C.
In terms of its electrical characteristics, the IDB10S60C diode has a turn-on time of 0.2μs at 10A and a reverse recovery time of 15μs at 10A. The junction capacitance of this diode is 0.4pF at 100V and the weight is 12g.
The working principle behind the IDB10S60C diode is quite simple. When there is a voltage placed on the anode and cathode of the diode, the diode will only allow current to flow in the forward direction. This is because the diode has a high resistance to the reverse current. As a result, the diode acts as a one-way gate, allowing current to flow only in one direction. It is important to note that the diode will conduct current in the reverse direction only momentarily. This is because the reverse voltage applied to the diode will cause a large amount of current to flow briefly, which can result in damage to the device.
The IDB10S60C is a single rectifier diode from Infineon Technologies. It is designed to be used in applications such as motor control, UPS, power supplies, and welding machines. Its features include a fast recovery from its off-state, low forward voltage drop, high surge current capability, as well as a low leakage current. The diode also has an operating temperature range of -40 to 125°C and a storage temperature range of -40 to 150°C. Its working principle is that it allows current to flow in only one direction due to its high resistance to the reverse current.
The specific data is subject to PDF, and the above content is for reference
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