Allicdata Part #: | IDC08S60CEX1SA3-ND |
Manufacturer Part#: |
IDC08S60CEX1SA3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE SIC 600V 8A SAWN WAFER |
More Detail: | Diode Silicon Carbide Schottky 600V 8A (DC) Surfac... |
DataSheet: | IDC08S60CEX1SA3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolSiC™ |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 8A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 8A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 100µA @ 600V |
Capacitance @ Vr, F: | 310pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
Operating Temperature - Junction: | -55°C ~ 175°C |
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Diodes are components that allow electricity to flow in one direction but restrict it in the opposite direction. Single-phase rectifiers are comprised of one diode in a single circuit. IDC08S60CEX1SA3 is a single-phase silicon rectifier diode with an ultra-fast recovery time. It is designed for use in low-noise, low-cost, high-volume applications.
The IDC08S60CEX1SA3 works by allowing an electric current to flow in only one direction. The diode consists of two alternately spaced layers of n-type and p-type semiconductor materials, separated by a junction. When a positive voltage is applied to the diode, current initially flows from the n-type material to the p-type material, forming a forward bias. This results in an increase of electron movement and, in turn, allows current to flow through the diode. If a negative voltage is applied to the diode, current initially flows from the p-type material to the n-type material, forming a reverse bias. This results in a decrease of electron movement, preventing current from passing through the diode.
IDC08S60CEX1SA3 is commonly used in general-purpose applications, as well as in power line converters, automobiles, and power supplies. It is designed to provide a high surge current rating of 8 Amps, an ultra-fast recovery time of 8ns, and excellent contrast then run current ratings from 50mA to 300mA. It is available in a hermetically sealed ceramic package, making it non-irritating and suitable for use in extremely harsh environments.
Additionally, because the IDC08S60CEX1SA3 are highly efficient, they can be used to virtually eliminate EMI interference caused by other components in the same circuit. This ensures a smooth, uninterrupted operation with minimal electromagnetic interference. Furthermore, the diode\'s low forward voltage drop prevents battery drain, allowing for more efficient power conversion. The ITD08S60CEX1SA3 is an ideal choice for those looking for an efficient and reliable diode solution.
The specific data is subject to PDF, and the above content is for reference
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