IDK08G65C5XTMA2 Allicdata Electronics
Allicdata Part #:

IDK08G65C5XTMA2-ND

Manufacturer Part#:

IDK08G65C5XTMA2

Price: $ 1.45
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE SCHOTTKY 650V 8A TO263-2
More Detail: Diode Silicon Carbide Schottky 650V 8A (DC) Surfac...
DataSheet: IDK08G65C5XTMA2 datasheetIDK08G65C5XTMA2 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.30349
Stock 1000Can Ship Immediately
$ 1.45
Specifications
Series: CoolSiC™
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Description

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AIDK08G65C5XTMA2 is an ultrafast recovery rectifier diode with superior performance. This has found a niche application in a variety of electronic subsystems, especially in systems with high switching frequencies. It provides better recovery characteristics and higher reverse voltage capabilities compared to other regular rectifier diodes.

The diode’s label refers to its single configuration as it consists of a single PN junction. The junction features a forward current conductance, allowing electrons to flow in a single direction and preventing them to travel in the opposite direction. The maximum amount of measurable forward current is 8A and the peak reverse voltage is 650V. The diode has a fast switching speed which makes it suitable for applications with high frequency applications.

The main advantage of using this diode is the low level of intensity consumed by the device. Given its size, the device consumes little power without sacrificing performance. This allows for more complex circuit designs with multiple components that require low power levels. The product also has proven thermal robustness and efficient heat dissipation as it is encapsulated in plastic material.

The diode is suitable for applications requiring superior high frequency powers with good protection. It is most suitable for rectifying AC power, transforming high voltage into pulsating DC power, and charging electrolytic capacitors. It is convenient for use in a wide range of high frequency, high load, power inverters and power supplies.

The working principle of the AIDK08G65C5XTMA2 is based on the diodes pass current due to the effect of the PN junction. When a given voltage is higher than the barrier of the PN junction, the charge carriers move from the N side to the p-type. As a result, the diode allows electrons to flow in the direction of the arrow drawn on package, but blocks all current in the opposite direction. As the voltage drops to a lower level than the barrier, the diode blocks electrons, as they can’t cross the junction in the reverse direction. As this is an ultrafast recovery rectifier, it provides fast protection in the presence of transients and high frequency switching.

In conclusion, AIDK08G65C5XTMA2 is an ideal device for applications requiring a single configuration rectifier diode with superior performance, such as power supplies, inverters and high load power inverters. It offers low power consumption as well as fast switching speeds, thermal robustness and efficient heat dissipation. The working principle of the diode is based on the effect of the PN junction, allowing electrons to pass in one direction, while blocking current in the opposite direction.

The specific data is subject to PDF, and the above content is for reference

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