Allicdata Part #: | IDP18E120XKSA1-ND |
Manufacturer Part#: |
IDP18E120XKSA1 |
Price: | $ 1.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE GEN PURP 1.2KV 31A TO220-2 |
More Detail: | Diode Standard 1200V 31A (DC) Through Hole PG-TO22... |
DataSheet: | IDP18E120XKSA1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 0.91557 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io): | 31A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 2.15V @ 18A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 195ns |
Current - Reverse Leakage @ Vr: | 100µA @ 1200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | PG-TO220-2-2 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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。The IDP18E120XKSA1 is a single rectifier diode that is part of the Infineon Technologies’s family of diode rectifier products. This diode rectifier is designed to provide electrical isolation and rectification efficiency in various circuits. It has a low forward drop due to its low VF of junction and an optimized datasheet for ease of use. In addition, the IDP18E120XKSA1 has an ultra-low leakage current which increases its reliability in applications where maximum current is critical.
The IDP18E120XKSA1 is a general-purpose rectifier diodes with both high reverse breakdown voltage and ultrafast recovery. The IDP18E120XKSA1 is mostly used for applications requiring rectification, such as driving motors, electronic toys, and building electronic circuits. This diode is usually utilized in DC (direct current) circuits with a maximum operating voltage of 100 V and a rated capacity of up to 6.2 A.
The IDP18E120XKSA1 works by allowing the current to travel one way but blocking it from travelling the other way. Its core is made of a semiconductive material, usually silicon, that has two distinct features. The N-type semiconductor is made of an abundance of electrons while the P-type has an abundance of holes. When the two materials are combined, they form an electric field that is made up of the electrons and holes that are trapped between them.
The working principle of the IDP18E120XKSA1 is that when a forward bias voltage is applied to the diode, the electrons in the N-type material are drawn to the P-type material. This creates a negative voltage dropped across the diode, which is known as the forward bias voltage. This allows for current to flow through the diode in one direction. Conversely, when a reverse bias voltage is applied, current is blocked from flowing through the diode as the movement of electrons and holes is hindered. This allows for the blocking of reverse current.
In conclusion, the IDP18E120XKSA1 is a single rectifier diode that can be used in various applications requiring rectification. It has a low VF of junction which allows for low forward drop and high rectification efficiency, and an ultra-low leakage current which increases its reliability. The IDP18E120XKSA1 works by allowing current to flow in one direction, and blocking it from travelling the opposite way when a reverse bias voltage is applied.
The specific data is subject to PDF, and the above content is for reference
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