
Allicdata Part #: | IDP30E65D1XKSA1-ND |
Manufacturer Part#: |
IDP30E65D1XKSA1 |
Price: | $ 1.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE GEN PURP 650V 60A TO220-2 |
More Detail: | Diode Standard 650V 60A (DC) Through Hole PG-TO220... |
DataSheet: | ![]() |
Quantity: | 231 |
1 +: | $ 1.31040 |
10 +: | $ 1.17873 |
100 +: | $ 0.94752 |
500 +: | $ 0.77851 |
1000 +: | $ 0.64504 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 650V |
Current - Average Rectified (Io): | 60A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 30A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 64ns |
Current - Reverse Leakage @ Vr: | 40µA @ 650V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | PG-TO220-2-1 |
Operating Temperature - Junction: | -40°C ~ 175°C |
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Diodes are a type of electrical component that permits the flow of current in one direction while blocking the flow in the other direction. They are commonly used in electronic circuits as rectifiers, allowing alternating current to be changed into direct current. IDP30E65D1XKSA1 is a type of diode often used for rectification, as well as for other applications. This article will discuss the application field and working principle of IDP30E65D1XKSA1.
Application Field
The IDP30E65D1XKSA1 is a single diode that can be used in a wide range of applications. It has a high forward current of 30A (maximum) with a wide operation temperature range of -55℃ to 150℃. This makes it suitable for applications such as electronic devices with high power requirements, as well as switching and rectification applications. It also has a low thermal resistance and a high thermal shock performance.
In addition, the IDP30E65D1XKSA1 can be used for various automotive applications. It has a high operating voltage of 650V for AC and DC, which allows it to be used in applications such as bridges rectifiers, motor controls, and voltage-sensing applications. It is also suitable for use in power supplies, inverters, and in other circuits where low forward voltage drop and fast switching speed are necessary.
Working Principle
The IDP30E65D1XKSA1 diode has a simple circuit design that consists of two p-type semiconductor layers, a cathode and an anode. The n-type layer separates them. When the diode is forward biased, the voltage on the anode is higher than the voltage on the cathode, causing electrons to be drawn through the n-type layer. This creates a current path through the diode.
When the diode is reverse biased, the voltage on the anode is lower than the voltage on the cathode, preventing current from flowing through the diode. This is due to the n-type layer blocking the movement of electrons. The IDP30E65D1XKSA1 diode has a high voltage breakdown threshold, which means it can safely operate at higher voltages.
The IDP30E65D1XKSA1 diode has a wide range of uses and can be used for both AC and DC applications. It is well-suited for various automotive and power electronics applications, as well as for switching and rectification functions. The diode has a low forward voltage drop, a high threshold voltage, and fast switching speeds, making it an ideal choice for high-efficiency rectification and switching applications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
IDP30E65D2XKSA1 | Infineon Tec... | 0.95 $ | 1000 | DIODE GEN PURP 650V 60A T... |
IDP30E120XKSA1 | Infineon Tec... | -- | 496 | DIODE GEN PURP 1.2KV 50A ... |
IDP30E60XKSA1 | Infineon Tec... | 1.09 $ | 1000 | DIODE GEN PURP 600V 52.3A... |
IDP31-104-P40DVW1E | Advantech Co... | 482.97 $ | 1000 | PROFESSIONAL PROFLAT TOUC... |
IDP30E65D1XKSA1 | Infineon Tec... | 1.44 $ | 231 | DIODE GEN PURP 650V 60A T... |
IDP30C65D2XKSA1 | Infineon Tec... | -- | 1000 | DIODE 650V 30A RAPID2 TO2... |
IDP31-104-P40DVB1E | Advantech Co... | 482.97 $ | 1000 | PROFESSIONAL PROFLAT TOUC... |
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