IDP30E65D1XKSA1 Allicdata Electronics
Allicdata Part #:

IDP30E65D1XKSA1-ND

Manufacturer Part#:

IDP30E65D1XKSA1

Price: $ 1.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE GEN PURP 650V 60A TO220-2
More Detail: Diode Standard 650V 60A (DC) Through Hole PG-TO220...
DataSheet: IDP30E65D1XKSA1 datasheetIDP30E65D1XKSA1 Datasheet/PDF
Quantity: 231
1 +: $ 1.31040
10 +: $ 1.17873
100 +: $ 0.94752
500 +: $ 0.77851
1000 +: $ 0.64504
Stock 231Can Ship Immediately
$ 1.44
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 60A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 64ns
Current - Reverse Leakage @ Vr: 40µA @ 650V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C
Description

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Diodes are a type of electrical component that permits the flow of current in one direction while blocking the flow in the other direction. They are commonly used in electronic circuits as rectifiers, allowing alternating current to be changed into direct current. IDP30E65D1XKSA1 is a type of diode often used for rectification, as well as for other applications. This article will discuss the application field and working principle of IDP30E65D1XKSA1.

Application Field

The IDP30E65D1XKSA1 is a single diode that can be used in a wide range of applications. It has a high forward current of 30A (maximum) with a wide operation temperature range of -55℃ to 150℃. This makes it suitable for applications such as electronic devices with high power requirements, as well as switching and rectification applications. It also has a low thermal resistance and a high thermal shock performance.

In addition, the IDP30E65D1XKSA1 can be used for various automotive applications. It has a high operating voltage of 650V for AC and DC, which allows it to be used in applications such as bridges rectifiers, motor controls, and voltage-sensing applications. It is also suitable for use in power supplies, inverters, and in other circuits where low forward voltage drop and fast switching speed are necessary.

Working Principle

The IDP30E65D1XKSA1 diode has a simple circuit design that consists of two p-type semiconductor layers, a cathode and an anode. The n-type layer separates them. When the diode is forward biased, the voltage on the anode is higher than the voltage on the cathode, causing electrons to be drawn through the n-type layer. This creates a current path through the diode.

When the diode is reverse biased, the voltage on the anode is lower than the voltage on the cathode, preventing current from flowing through the diode. This is due to the n-type layer blocking the movement of electrons. The IDP30E65D1XKSA1 diode has a high voltage breakdown threshold, which means it can safely operate at higher voltages.

The IDP30E65D1XKSA1 diode has a wide range of uses and can be used for both AC and DC applications. It is well-suited for various automotive and power electronics applications, as well as for switching and rectification functions. The diode has a low forward voltage drop, a high threshold voltage, and fast switching speeds, making it an ideal choice for high-efficiency rectification and switching applications.

The specific data is subject to PDF, and the above content is for reference

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