
Allicdata Part #: | IDP45E60XKSA1-ND |
Manufacturer Part#: |
IDP45E60XKSA1 |
Price: | $ 2.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE GEN PURP 600V 71A TO220-2 |
More Detail: | Diode Standard 600V 71A (DC) Through Hole PG-TO220... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.82700 |
10 +: | $ 1.64304 |
100 +: | $ 1.32080 |
500 +: | $ 1.08516 |
1000 +: | $ 0.89913 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 71A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 2V @ 45A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 140ns |
Current - Reverse Leakage @ Vr: | 50µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | PG-TO220-2-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IDP45E60XKSA1 belongs to the Diodes - Rectifiers - Single category and is a high power diode with a maximum peak inverse voltage (PIV) of 600V. It is a medium speed diode with a maximum junction temperature of 150°C and a maximum operating temperature of 125°C. It has a maximum power dissipation rating of 4.5W, a maximum reverse current of 30mA and a reverse recovery time of 250ns.
The IDP45E60XKSA1 has multiple applications in a wide range of industries, including telecommunications, automotive, industrial motor control, home appliances, and power supplies. This diode is well-suited for rectification applications, such as high voltage AC/DC converters, zeners, bridge circuits, voltage multipliers, etc. It can also be used in commutation circuits, waveform rectifier controls and overvoltage protection circuits.
The working principle of the IDP45E60XKSA1 is based on the fact that it is a unidirectional semiconductor device, which means that current can only pass through the device in one direction. The device consists of two sections, an Anode and a Cathode. When a voltage is applied to the diode, current can pass through the Anode to the Cathode, creating what is known as a forward bias. When a voltage of a greater magnitude is applied to the Cathode, the diode will become reverse biased and no current will be able to pass through.
The IDP45E60XKSA1 has excellent electrical characteristics, making it ideal for a wide range of applications. Its maximum power dissipation rating of 4.5W, maximum peak inverse voltage of 600v and maximum junction temperature rating of 150°C make it suitable for use in high power, high voltage applications. Its maximum reverse current of 30mA, reverse recovery time of 250ns, and low forward Voltage drop make it ideal for use in low power, low voltage applications.
In conclusion, the IDP45E60XKSA1 is a high power single diode belonging to the Diodes - Rectifiers - Single category. It has multiple applications in a wide range of industries and is well-suited for rectification and commutation applications, as well as overvoltage protection circuits. It has excellent electrical characteristics, making it an ideal choice for both high power and low power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IDP40E65D2XKSA1 | Infineon Tec... | 1.69 $ | 7 | DIODE GEN PURP 650V 40A T... |
IDP45E60XKSA1 | Infineon Tec... | 2.03 $ | 1000 | DIODE GEN PURP 600V 71A T... |
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