Allicdata Part #: | IDW100E60FKSA1-ND |
Manufacturer Part#: |
IDW100E60FKSA1 |
Price: | $ 3.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE GEN PURP 600V 150A TO247-3 |
More Detail: | Diode Standard 600V 150A (DC) Through Hole PG-TO24... |
DataSheet: | IDW100E60FKSA1 Datasheet/PDF |
Quantity: | 197 |
1 +: | $ 2.97360 |
10 +: | $ 2.66805 |
240 +: | $ 2.18615 |
720 +: | $ 1.86105 |
1200 +: | $ 1.56955 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 150A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 2V @ 100A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 120ns |
Current - Reverse Leakage @ Vr: | 40µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Operating Temperature - Junction: | -55°C ~ 175°C |
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IDW100E60FKSA1 Application Field and Working Principle
IDW100E60FKSA1 is a type of P-channel and Field Stop IGBT, which belongs to the category of Diodes - Rectifiers - Single. From the perspective of its application field, this type of diode is particularly suitable for applications such as AC/DC converters and lighting ballast, in which power control, efficiency and high frequency performance are needed. Given its small package, IDW100E60FKSA1 is also suitable for high-density power conversion design.
Working Principle
The working principle of IDW100E60FKSA1 is based on the same principle as other IGBTs, which is the so-called \'added gate theory\'. The gate of the device consists of two transistors: a p-channel transistor and an n-channel transistor. A potential difference between the gate-drain voltage of these two transistors creates an electric field overlapping the gate, which leads to the blocking of minority current. This process is enhanced by the \'field stop\' structure, which improves the device’s reliability and makes it suitable for applications in high frequency.
Benefits of Using IDW100E60FKSA1
The first benefit of using IDW100E60FKSA1 is that it has low gate-drain capacitance and low gate-source capacitance, which allows for better switching performance. Secondly, the device has an excellent thermal conductivity rate due to its small size and its configuration. Last but not least, this IGBT is extremely reliable and can withstand large electric currents, making it suitable for use in high power conversion systems.
Conclusion
In conclusion, the IDW100E60FKSA1 is a type of diode that belongs to the category of Diodes - Rectifiers - Single. Thanks to its low gate-drain and gate-source capacitance, excellent thermal conductivity rate and high reliability, this IGBT is particularly suitable for applications such as AC/DC converters and lighting ballast, in which power control, efficiency and high frequency performance are needed.
The specific data is subject to PDF, and the above content is for reference
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