IGB01N120H2ATMA1 Discrete Semiconductor Products

Power - Max:	28W
Supplier Device Package:	PG-TO263-3-2
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Test Condition:	800V, 1A, 241 Ohm, 15V
Td (on/off) @ 25°C:	13ns/370ns
Gate Charge:	8.6nC
Input Type:	Standard
Switching Energy:	140µJ
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 1A
Current - Collector Pulsed (Icm):	3.5A
Current - Collector (Ic) (Max):	3.2A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Not For New Designs
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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The IGB01N120H2ATMA1 is a new type of IGBT (Insulated Gate Bipolar Transistor) that is a single device, meaning that it includes both the n-type and p-type transistors in the same integrated circuit. This type of device provides better controllability, as well as higher power requirements, than other types of transistors.The IGB01N120H2ATMA1 is a type of N-channel IGBT, meaning that the voltage on the gate must be positive with respect to the voltage applied to the body of the device. This will allow the current flow between the collector and emitter of the IGBT to be controlled. The use of an N-channel transistor is preferred in applications that require a high-speed switching, such as in motor control applications.The IGB01N120H2ATMA1 features a wide range of applications in motor control, such as controlling motor speed and torque, as well as for power converter applications. It is suitable for use in any application where high-speed and high-power switching is necessary. The IGB01N120H2ATMA1 also has an operating temperature range from -40oC to 150oC and can handle voltages up to 1200V.The IGB01N120H2ATMA1 is typically used in three phase inverters, where the IGBT acts as an on/off switch to control the current in each phase. The IGBTs are switched on and off to control the torque, speed and direction of the motor. Generally, the IGB01N120H2ATMA1 can be used with a PWM (pulse width modulation) controller, where the IGBT is used to modulate the current in the three-phase system.The working principle behind the IGB01N120H2ATMA1 is relatively simple. The IGBT is essentially a combination of a n-type and p-type transistor connected together. The n-type parts of the IGBT are connected between source and drain and on applying a gate voltage, the n-type transistors allow current to pass from drain to source. At the same time, the p-type parts of the IGBT are connected from the drain to the source and by applying a gate voltage, the p-type transistors will impede the current from flowing from source to drain.This allows for precision control of the current between the source and the drain and so it can be used for motor control and power converter applications. As the IGB01N120H2ATMA1 only uses one integrated circuit, it can provide better control and power requirements than other types of transistors.The IGB01N120H2ATMA1 is a great device because of its wide range of applications, high durability and much more. It can be used in a variety of applications from motor control to power conversion and has the ability to provide precise current control between the source and drain which is essential for many applications.

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