IGB03N120H2ATMA1

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IGB03N120H2ATMA1 is a type of Insulated Gate Bipolar Transistor (IGBT) that belongs to the Single category. IGBTs are usually used to carry high voltage and high current, while ensuring a low voltage drop and low switching loss.

In comparison to traditional Bipolar Junction Transistors (BJT), IGBTs behavior is somewhere in between them and power MOSFETs. During the OFF state, the IGBT works like an open switch, avoiding the “snap-back” phenomenon of BJTs. During the ON stage, it behaves almost like a power MOSFET, with high current and low voltage drop.

The IGB03N120H2ATMA1 is a high voltage and high current N-channel IGBT, meaning that the conduction path from collector to emitter runs from the N-type substrate to the P-type collector region. The “2” version is especially developed for motor control applications, this version includes a parallel short-circuit clamp diode, with a reverse recovery time of 75nS.

In general, this IGBT can be used for a broad range of applications. It is specially suitable for driving systems that are powered by high voltages, such as powertransformers, DC/AC inverters, and AC/DC rectifiers. It can be used to control high power electrical devices, like solenoids, actuators, traction motors, and similar devices.

The IGB03N120H2ATMA1 is able to switch voltages up to 1700V and can handle currents up to 33A per device. Its best performances are obtained when the collector-emitter voltage is set between 5V and 1700V. Its operating temperature spans from -40ºC to 150ºC.

The IGB03N120H2ATMA1 works on the principle of injection of minority carriers across the collector-emitter junction. This minority carrier is enabled by a forward-biased gate that activates an efficient diffusion channel between the anode and the collector.

Once the gate is enabled, an electrical field is created between anode and collector, forming an n-channel that injects electrons into the collector region. This process can be interrupted by setting the upper voltage to 0V or by disabling the cathode current.

In conclusion, the IGB03N120H2ATMA1 is a device resembling both a BJT and a MOSFET transistor, with the best of both worlds: high current and low voltage drop with a short switching time. This device is most suitable for applications that require high voltages and high currents, and it can handle temperatures ranging from -40ºC to 150ºC.

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