IGB10N60TATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IGB10N60TATMA1TR-ND |
Manufacturer Part#: |
IGB10N60TATMA1 |
Price: | $ 0.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 20A 110W TO263-3 |
More Detail: | IGBT NPT, Trench Field Stop 600V 20A 110W Surface ... |
DataSheet: | IGB10N60TATMA1 Datasheet/PDF |
Quantity: | 2000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1000 +: | $ 0.46348 |
2000 +: | $ 0.43258 |
5000 +: | $ 0.41198 |
Series: | TrenchStop® |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT, Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 20A |
Current - Collector Pulsed (Icm): | 30A |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 10A |
Power - Max: | 110W |
Switching Energy: | 430µJ |
Input Type: | Standard |
Gate Charge: | 62nC |
Td (on/off) @ 25°C: | 12ns/215ns |
Test Condition: | 400V, 10A, 23 Ohm, 15V |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Base Part Number: | 10N60 |
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.The IGBT10N60TATMA1 is a high power Insulated Gate Bipolar Transistor (IGBT) from Fairchild Semiconductor.This transistor features 10 A of collector current, and a 600 V maximum voltage rating, making it suitable for a variety of applications in power management and energy efficiency. This device is also available in single and dual packages, so it can be used as part of a system that requires more than one transistor. Let’s look at the application fields and working principle of the IGBT10N60TATMA1.
Application Fields
IGBTs such as the IGBT10N60TATMA1 are often used in power switching applications, especially those related to energy efficient systems. In addition, they can be used in more complex applications such as motor control and digital power management. This transistor is also well suited to use in lighting systems, as it can handle a wide range of voltages and currents. In addition, IGBTs such as this one are often used in renewable energy systems, as they are highly efficient and provide reliable control.
Working Principle
The IGBT10N60TATMA1 is a combination of a MOSFET and a bipolar transistor, which allows it to combine the benefits of both technologies. This type of transistor uses an insulated gate to control the current flow between the emitter and the collector. The gate voltage is used to turn the transistor on or off, so it can be used to control current flow. The IGBT10N60TATMA1 also has a high current rating which allows it to handle more power than other transistors. In addition, the IGBT10N60TATMA1 is designed with high switching speeds, which make it perfect for high-frequency applications.
The IGBT10N60TATMA1 is a versatile and powerful transistor that can be used in a variety of applications. Its combination of power and efficiency make it a great choice for systems that require reliable control and high switching speeds. With its wide voltage and current ratings, this transistor can handle a variety of power management and energy efficiency applications. It is an excellent choice for motor control and lighting systems, as well as renewable energy systems. This transistor’s combination of an insulated gate and bipolar transistor technology make it a great choice for high power applications.
The specific data is subject to PDF, and the above content is for reference
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