Allicdata Part #: | IGB15N60TATMA1TR-ND |
Manufacturer Part#: |
IGB15N60TATMA1 |
Price: | $ 0.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 30A 130W TO263-3-2 |
More Detail: | IGBT Trench 600V 30A 130W Surface Mount PG-TO263-3... |
DataSheet: | IGB15N60TATMA1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1000 +: | $ 0.64917 |
Specifications
Power - Max: | 130W |
Supplier Device Package: | PG-TO263-3-2 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 400V, 15A, 15 Ohm, 15V |
Td (on/off) @ 25°C: | 17ns/188ns |
Gate Charge: | 87nC |
Input Type: | Standard |
Switching Energy: | 570µJ |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 15A |
Current - Collector Pulsed (Icm): | 45A |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The IGB15N60TATMA1 is an Insulated-Gate Bipolar Transistor (IGBT) used in a wide range of applications. It has two completely isolated electrodes: the Gate and the Emitter. The gate is clamped between two layers of dielectric material, while the emitter is a low-resistance semiconductor material. The gate controls the current flow between the electrodes, unclamped voltage and current flow. IGB15N60TATMA1 is available in Single configuration, as well as Dual or Triple configurations.Application field
IGB15N60TATMA1 is suitable for a variety of applications such as lighting, motor drives, welding, and solar inverters. It is particularly useful as a power switch in applications where high current transfer is required. It is also an ideal choice for UPS applications where it can control current and voltage in order to increase power efficiency. Furthermore, IGB15N60TATMA1 has a wide operating temperature range, which makes it suitable for severe environments.Working principle
The working principle of the IGB15N60TATMA1 is based on the fact that current can only be transferred between the two electrodes when the gate is biased in the forward direction. It can also be used as a static switch, with no need for a power supply. When the gate is turned on, the electrons are allowed to travel between the two electrodes. When the gate is off, no current can transfer between the electrodes. The on and off state of the gate can be controlled by applying a voltage on the gate terminal.Advantages
There are several advantages that make IGB15N60TATMA1 an ideal device for power switching. First, it is fast-switching, allowing for quick and precise control of power. Second, it is highly reliable, reducing downtime and providing more accurate power control. Third, it has a low on-state voltage, meaning that energy losses are minimized and total energy costs are lower. Finally, it has a wide operating temperature range, making it suitable for harsh environments.Conclusion
IGB15N60TATMA1 is an ideal switch for applications with high current transfer requirements such as UPS applications and motor drives. Its fast switching and reliable operation make it an ideal choice, while its low on-state voltage ensures minimal energy losses and lower total energy costs. Additionally, its wide operating temperature range makes it suitable for a variety of environments, making it a truly versatile device.The specific data is subject to PDF, and the above content is for reference
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