IGB20N60H3ATMA1 Discrete Semiconductor Products

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Igbt20n60h3atma1 is a first generation insulated gate bipolar transistor (IGBT) from Diodes Incorporated, a leading supplier of semiconductor components. Igbt20n60h3atma1 is a general purpose device, which means it can be used for a variety of applications. It is available in both small and large-scale production formats and offers low on-state resistance, fast switching speeds and high peak current ratings.

In general, IGBTs are similar to the traditional power transistors but with a few additional features. The main principle is to use the gate insulation of the transistor to increase the switching speed and reduce power dissipation. IGBTs have the ability to control both positive and negative voltages and currents, while traditional power transistors are limited to controlling only positive voltages and currents. This makes IGBTs much more versatile in terms of application.

The igbt20n60h3atma1 is meant to be used in power switching and control applications. It has a rated collector current of 200 Amps, with a peak collector current of up to 350 Amps, and a collector-emitter voltage of 600V. It has a gate-emitter voltage of 10-20V, a gate current of 2A, and a gate resistor of 1.3K*. It also has a thermal resistance of 0.9C/W and a maximum junction temperature of 150C.

The igbt20n60h3atma1 is best suited for use in applications requiring a low on-state resistance and fast switching speed. Its low on-state resistance allows for a minimum loss of power in switching operations, while its fast switching speed ensures better efficiency in control applications. The IGBT is an excellent choice for applications such as motor control, cell battery charger, uninterruptible power supplies, and industrial power system drivers. This IGBT is also ideal for applications which require an additional power range over the traditional power transistor.

The principle of operation of this IGBT is similar to the traditional power transistor. When the gate voltage is applied, it causes a current to flow between the collector and the emitter. This current then latches to the collector and the collector-emitter voltage drop is linear. This process is called the turn-on process. When the gate voltage is removed, the current between the collector and the emitter is reduced and the collector-emitter voltage is reversed. This process is referred to as the turn-off process.

In summary, igbt20n60h3atma1 is an efficient and reliable single IGBT suitable for a variety of power switching and control applications. It has a low on-state resistance, fast switching speed, and high peak current ratings. It is best used for applications which require an additional power range over the traditional power transistor, such as motor control, cell battery charger, uninterruptible power supplies, and industrial power system drivers. Additionally, the igbt20n60h3atma1 operates using the same turn-on and turn-off processes as traditional power transistors.

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