IGB20N65S5ATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IGB20N65S5ATMA1 is a junction field-effect transistor (JFET) with two-terminal connections and a single-gate structure. This model is part of the Infineon\'s latest energy-efficient IGBT family, the CoolMOS™ Cool-Power series. The IGB20N65S5ATMA1 offers a wide range of features designed to enable high efficiency and accurate temperature measurements which maximize power savings in a highly cost-effective way. This benefits engineers working on applications including motor drives, power tools, solar inverters and welding equipment.

The IGB20N65S5ATMA1 features a reliable high switching speed, low switching losses and a soft-chopping technology. These features provide reduced stress on circuit components, which prevents wear and tear, thus allowing long-lasting operation. Additionally, the IGB20N65S5ATMA1 has a proprietary co-planarity structure, which ensures optimum voltage and current gains during switching, thus enabling a smooth switching operation. The built-in enhanced power capacity permits higher power efficiency due to improved thermal capacitance and low switching energy losses.

The IGB20N65S5ATMA1 works primarily by cutting off the current flow in one direction. The junction field-effect (JFET) transistor, when off, is capable of blocking all gate current and maintaining conduction between source and drain terminals. This allows for a high input impedance, which is useful if the transistor will be used with high impedance, logic level variety signals. The other direction is capable of data transmission, allowing for low n-channel resistance. When a positive gate-source voltage is applied, the JFET turns on, or enters conduction state, thus enabling current to flow through the source-drain terminals.

Thanks to the 95A current-carrying capabilities and a maximum junction temperature of 175°C, the IGB20N65S5ATMA1 can handle a wide variety of applications. With the largest selection in the series, the IGB20N65S5ATMA1 offers the same variety of reversible and non-reversible conducting channels including fast-switching sinusoidal gate, for low gate charge, and slow-switching gate, for minimum switching losses. Additionally, it features a low reverse recovery time for achieving lower transient dV/dt and temperature-independent gate-source operating voltage.

The IGB20N65S5ATMA1 is designed to provide maximum power density, thus allowing devices to be miniaturized and easy to install into the end user\'s devices. This model has an ultra-low thermal resistance, further enabled by its higher cell pitch and advanced cell layout, thus allowing a reduced level of components in the parameter board. This technical feat translates into improved power efficiency, as power losses are minimized at every level. The reduction of heat generated also leads to a decrease in energy bills.

With its advanced junction technology, the IGB20N65S5ATMA1 can provide low switching losses, fast switching speeds, improved power efficiency and excellent temperature characteristics. This enables maximum energy savings, increased reliability and safety. Additionally, this model is fully compatible with standard IGBT packages thus allowing for a wide range of implementation possibilities. The IGB20N65S5ATMA1 is suitable for use in a diverse range of applications requiring secure and high performance.

The specific data is subject to PDF, and the above content is for reference