IGC13T120T8LX1SA1 Allicdata Electronics

IGC13T120T8LX1SA1 Discrete Semiconductor Products

Allicdata Part #:

IGC13T120T8LX1SA1-ND

Manufacturer Part#:

IGC13T120T8LX1SA1

Price: $ 2.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 10A SAWN ON FOIL
More Detail: IGBT Trench Field Stop 1200V Surface Mount Die
DataSheet: IGC13T120T8LX1SA1 datasheetIGC13T120T8LX1SA1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 1.89000
Stock 1000Can Ship Immediately
$ 2.08
Specifications
Series: TrenchStop™
Part Status: Active
Lead Free Status / RoHS Status: --
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 8A
Switching Energy: --
Input Type: Standard
Td (on/off) @ 25°C: --
Test Condition: --
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Description

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The IGC13T120T8LX1SA1 transistor is a single-IGBT transistor module, which is certified to meet RoHS requirements and which has a wide variety of applications in industry. The IGC13T120T8LX1SA1 is a low loss IGBT that combines low on-state voltage drop, fast switching times and excellent thermal performance. It is designed to provide efficient power conversion solutions, high reliability and long-term use in applications such as motor control, motor drive systems, motor braking, power switching and power management.

The IGC13T120T8LX1SA1 transistor is based on the Insulated Gate Bipolar Transistor (IGBT) technology. IGBTs are designed to combine the fast and efficient switching capabilities of a MOSFET with the current handling capabilities and high-voltage isolation of a bipolar transistor. IGBTs are ideal for applications that require high current, fast switching times and excellent thermal transfer capabilities.

The IGC13T120T8LX1SA1 transistor provides fast switching times and a low voltage on-state, making it ideal for applications such as motor control, motor drive systems, motor braking, power switching and power management. It has an operating temperature range of -20 to +85 degrees Celsius. It is capable of providing a continuously adjustable maximum current of up to 8A at high junction temperatures of up to +150 degrees Celsius.

The IGC13T120T8LX1SA1 transistor is also designed to offer excellent thermal transfer and dissipate heat efficiently. It has a non-insulated base plate, which helps to move the excess heat away from the transistor and reduce the effects of heat build-up on the device. The IGC13T120T8LX1SA1 also has an internal electrostatic discharge protection which helps to prevent damage to the device due to static electricity.

The IGC13T120T8LX1SA1 transistor works by controlling the current flow between the source and the drain. The transistor is actuated using an electric signal that is applied to the gate, which then switches the devices internal voltage on and off, allowing for current flow. Depending on the voltage level of the electric signal, the IGBT can be used to control devices such as motors, relays and solenoids. By varying the electronic signal, or by using a combination of different signals, the IGBT can be used to control various loads.

The IGC13T120T8LX1SA1 transistor can be used for many applications in industries such as automotive, power supplies, robotics, medical, automotive, and in building automation. It is an ideal device for applications where low loss and high current switching capabilities are needed. The IGC13T120T8LX1SA1 transistor is also becoming increasingly popular in industrial applications as well as consumer products due to its reliability, efficiency and low cost.

The specific data is subject to PDF, and the above content is for reference

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