IGC142T120T8RLX1SA2 Discrete Semiconductor Products

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IGC142T120T8RLX1SA2, is a type of Insulated Gate Bipolar Transistor (IGBT) whichon categorized in the series Single IGBTs. It is a type of power semiconductor device which combine the best features of both MOSFETs and bipolar junction transistors (BJT) by using two isolated gates and p-n-p-n junction in the structure. It is designed for high current and high voltage applications.

The IGC142T120T8RLX1SA2 IGBT provides superior performance, low gate current, high forward current capability, low forward voltage drop and low switching losses. It is typically used as a switching device in power control, light dimming control and motor drive applications. It is also used in energy measurement and control systems, high-end audio amplifiers and high voltage inverters.

The IGC142T120T8RLX1SA2 IGBT has an applications field of switching operations, protection and control in all power electronics applications such as UPS, welding, Solar Inverters, SMPS and AC Drives. It also has applications in consumer products like air conditioners, washing machines and water heaters.

The working principle of the IGC142T120T8RLX1SA2 IGBT is based on the voltage-controlled mechanism. When a positive voltage is applied to the gate terminal, holes in the channel region move toward the n-type channel due to the P+ ion implantation, while a negative voltage reduces the depletion layer and creates an inversion layer of electrons. This inversion layer creates a high conductive channel between the drain and source, allowing current flow between them.

Additionally, when current flows between the drain and source terminals, the charge carriers in the channel region can be controlled by applying a certain gate voltage. When the gate-source voltage is zero volt or less, the channel is completely shutoff and the current flowing between source and drain is zero. On the other hand, when the gate-source voltage is higher than the threshold voltage the current flow between the source and drain is increased.

In conclusion, the IGC142T120T8RLX1SA2 IGBT is a device which combines the best features of both MOSFETs and bipolar junction transistors (BJT) and is used in a variety of high-power switching and control applications. Its operation is dependent on a voltage-controlled mechanism and enables high current capabilities with low gate currents and low switching losses.

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