IGC27T120T8LX1SA2 Discrete Semiconductor Products

Series:	TrenchStop™
Part Status:	Active
Lead Free Status / RoHS Status:	--
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector Pulsed (Icm):	75A
Vce(on) (Max) @ Vge, Ic:	2.07V @ 15V, 25A
Switching Energy:	--
Input Type:	Standard
Td (on/off) @ 25°C:	--
Test Condition:	--
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Die
Supplier Device Package:	Die

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Introduction to IGC27T120T8LX1SA2

The IGC27T120T8LX1SA2 is a discrete component, specifically an Insulated-Gate-Bipolar Transistor (IGBT) designed and produced by Infineon Technologies. It is a single device and is designed to be used in a variety of medium to high power applications. This article will provide an introduction to the IGC27T120T8LX1SA2, discussing the application fields and working principles of the device.

IGC27T120T8LX1SA2 Applications

The IGC27T120T8LX1SA2 is suitable for a variety of medium to high power applications. Its ability to efficiently switch power on and off is well-suited to vehicular applications, such as traction systems in electric vehicles, hybrid cars, and motorcycles, as well as power systems for ships, airplanes, and other applications. Additionally, its ability to switch frequency appropriately makes it well-suited for use in the industrial Power electronics field, such as in welders, solar and wind energy converters, frequency inverters, UPS and AC drives, and various other industrial applications.

Working Principles of IGC27T120T8LX1SA2

The IGC27T120T8LX1SA2 is an Insulated-gate-bipolar transistors (IGBTs) device. An IGBT consists of two terminals, the emitter and collector, which are typically connected to the power source, and a gate terminal. When a voltage is applied to the gate terminal, it creates a conductive path between the emitter and collector, allowing current to flow between them and triggering a switch that can be used to turn devices on and off. The IGC27T120T8LX1SA2 utilizes what is known as a “field-stop” IGBT, which is engineered to limit the amount of voltage that is transferred from the collector to the emitter, providing better control and eliminating the need for an external capacitor. The field-stop IGBT is capable of operating at a high frequency, enabling it to be used in applications with rapid switching needs. In addition, it has superior switching performance and higher current carrying capacity than standard IGBTs.

Conclusion

The IGC27T120T8LX1SA2 is an Insulated-Gate-Bipolar transistor (IGBT) designed by Infineon Technologies. It is capable of rapidly switching power on and off and is suitable for a range of medium to high power applications, including vehicular systems, industrial power electronics, and frequency inverters. Its field-stop IGBT design provides superior switching performance and higher current carrying capacity than regular IGBTs.

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